On determining the strength of the electron-phonon interaction from electron energy relaxation times

2012 ◽  
Vol 111 (11) ◽  
pp. 112605 ◽  
Author(s):  
C. Gadermaier ◽  
V. V. Kabanov ◽  
A. S. Alexandrov ◽  
D. Mihailovic
Keyword(s):  
Electron Energy ◽  
Relaxation Times ◽  
Energy Relaxation ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Scaling relationships for nonadiabatic energy relaxation times in warm dense matter: toward understanding the equation of state

2016 ◽  
Vol 18 (47) ◽  
pp. 32466-32476 ◽  
Author(s):  
Ekadashi Pradhan ◽  
Rudolph J. Magyar ◽  
Alexey V. Akimov
Keyword(s):  
Energy Transfer ◽  
Equation Of State ◽  
Electron Energy ◽  
Mass Density ◽  
Relaxation Times ◽  
Dense Matter ◽  
Energy Relaxation ◽  
Warm Dense Matter ◽  
Transfer Rates ◽  
Scaling Relationships

The dependence of nonadiabatic ion-electron energy transfer rates in warm dense aluminum on the mass density and temperature with decoherence changing this relationship qualitatively.

Electron energy relaxation times from ballistic-electron-emission spectroscopy

2000 ◽  
Vol 61 (7) ◽  
pp. 4522-4525 ◽  
Author(s):  
K. Reuter ◽  
U. Hohenester ◽  
P. L. de Andres ◽  
F. J. García-Vidal ◽  
F. Flores ◽  
...  
Keyword(s):  
Electron Energy ◽  
Electron Emission ◽  
Emission Spectroscopy ◽  
Relaxation Times ◽  
Energy Relaxation ◽  
Ballistic Electron

Electron-Phonon Interaction Model and Thermal Transport Simulation During ESD Event in NMOS Transistor

2007 ◽  
Author(s):  
Jae Sik Jin ◽  
Joon Sik Lee
Keyword(s):  
Group Velocity ◽  
Electron Energy ◽  
Phonon Dispersion ◽  
Dispersion Model ◽  
Hot Spot ◽  
Thermal Response ◽  
Interaction Model ◽  
Phonon Interaction ◽  
Nmos Transistor ◽  
Electron Phonon Interaction

An electron-phonon interaction model is proposed and applied to the transient thermal transport simulation during electrostatic discharge (ESD) event in the NMOS transistor. The high electron energy induced by the ESD in the transistor is transferred to the lattice phonons through electron-phonon interaction in the local region of the transistor. Due to this fact, a hot spot turns up, the size of which is much smaller than the phonon mean free path in the silicon layer. The full phonon dispersion model based on the Boltzmann transport equation (BTE) with the relaxation time approximation is applied to describe the interactions among different phonon branches and different phonon frequencies. The Joule heating by the electronphonon scattering is modeled through the intervalley and intravalley processes by introducing the average electron energy. In the simulation, the electron-phonon interaction model is used in the hot spot region, and then after a quasi-equilibrium state is achieved there, the temperature of lattice phonons in the silicon is calculated by using the phonon-phonon interaction model. The revolution of peak temperature in the hot spot during the ESD event is simulated and compared to that obtained by the previous full phonon dispersion model which treats the electron-phonon scattering as a volumetric heat source. The results show that the lower group velocity phonon modes (i.e. higher frequency) and optical mode of negligible group velocity obtain the highest energy density from electrons during the ESD event, which induces the devices melting phenomenon. The thermal response of phonon is also investigated, and it is found that the ratio of the phonon group velocity to the phonon specific heat can account for the phonon thermal response. If the ratio is higher than 2, the phonon have a good response to the heat input changes.

Relaxation Dynamics of Carriers in Graphene

2018 ◽  
Vol 24 (8) ◽  
pp. 5666-5668 ◽  
Author(s):  
Vipin Kumar
Keyword(s):  
Dirac Point ◽  
Energy Relaxation ◽  
Monolayer Graphene ◽  
The Novel ◽  
Relaxation Dynamics ◽  
Rabi Oscillations ◽  
Phonon Interaction ◽  
Long Wavelength ◽  
Electron Phonon Interaction ◽  
Near Resonance

We study the damping of anomalous Rabi oscillations in monolayer graphene by means of electron–phonon interaction. Our calculations show that the electron–phonon interaction led to the novel incoherent anomalous Rabi oscillations in graphene. Conventional Rabi oscillations occur near resonance show an energy relaxation discussed elsewhere. Anomalous Rabi oscillations display almost zero energy relaxation in the presence of long-wavelength phonons at the Dirac point in the first Brillouin zone. The role of electron–phonon interaction in dephasing of anomalous Rabi oscillations is prominent far away from the Dirac point. There are huge numbers of anomalous Rabi cycles present near the Dirac point.

scholarly journals Parametric dependence of hot electron relaxation timescales on electron-electron and electron-phonon interaction strengths

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Richard B. Wilson ◽  
Sinisa Coh
Keyword(s):  
Relaxation Times ◽  
High Energy ◽  
Hot Electron ◽  
Electronic Subsystem ◽  
Electron Dynamics ◽  
Phonon Interaction ◽  
Photoexcited Electron ◽  
Electron Phonon Interaction ◽  
Electron Relaxation ◽  
Scattering Rates

AbstractUnderstanding how photoexcited electron dynamics depend on electron-electron (e-e) and electron-phonon (e-p) interaction strengths is important for many fields, e.g. ultrafast magnetism, photocatalysis, plasmonics, and others. Here, we report simple expressions that capture the interplay of e-e and e-p interactions on electron distribution relaxation times. We observe a dependence of the dynamics on e-e and e-p interaction strengths that is universal to most metals and is also counterintuitive. While only e-p interactions reduce the total energy stored by excited electrons, the time for energy to leave the electronic subsystem also depends on e-e interaction strengths because e-e interactions increase the number of electrons emitting phonons. The effect of e-e interactions on energy-relaxation is largest in metals with strong e-p interactions. Finally, the time high energy electron states remain occupied depends only on the strength of e-e interactions, even if e-p scattering rates are much greater than e-e scattering rates.

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