scholarly journals Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

2012 ◽  
Vol 100 (23) ◽  
pp. 232105 ◽  
Author(s):  
Claes Thelander ◽  
Philippe Caroff ◽  
Sébastien Plissard ◽  
Kimberly A. Dick
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Insb Nanowires

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 250-254 ◽  
Author(s):  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Hidemi Takasu ◽  
Paul Fons ◽  
Kakuya Iwata ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films

Interface effects on electrical properties of high purity InP grown by gas-source molecular beam epitaxy

1991 ◽  
Vol 110 (4) ◽  
pp. 910-914 ◽  
Author(s):  
K. Rakennus ◽  
K. Tappura ◽  
T. Hakkarainen ◽  
H. Asonen ◽  
R. Laiho ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Gas Source ◽  
Interface Effects

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

Electrical properties of Pb1-xSnxTe layers with 0⩽x⩽1 grown by molecular beam epitaxy

1997 ◽  
Vol 82 (5) ◽  
pp. 2405-2410 ◽  
Author(s):  
E. Abramof ◽  
S. O. Ferreira ◽  
P. H. O. Rappl ◽  
H. Closs ◽  
I. N. Bandeira
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

The heterostructure and electrical properties of Sb2Se3/Bi2Se3 grown by molecular beam epitaxy

2019 ◽  
Vol 62 ◽  
pp. 65-71
Author(s):  
You-Jyun Chen ◽  
Ya-Chen Jhong ◽  
Pei-Yu Chuang ◽  
Cheong-Wei Chong ◽  
Jung-Chun-Andrew Huang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam
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