GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy

2012 ◽  
Vol 100 (22) ◽  
pp. 222104 ◽  
Author(s):  
J. S. Hwang ◽  
J. T. Tsai ◽  
I. C. Su ◽  
H. C. Lin ◽  
Y. T. Lu ◽  
...  
2009 ◽  
Vol 95 (14) ◽  
pp. 141914 ◽  
Author(s):  
K. I. Lin ◽  
H. C. Lin ◽  
J. T. Tsai ◽  
C. S. Cheng ◽  
Y. T. Lu ◽  
...  

1999 ◽  
Vol 573 ◽  
Author(s):  
J. S. Hwan ◽  
G. S. Chang

ABSTRACTIn this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.


Nanoscale ◽  
2019 ◽  
Vol 11 (36) ◽  
pp. 16828-16836 ◽  
Author(s):  
Thibaut Gallet ◽  
David Grabowski ◽  
Thomas Kirchartz ◽  
Alex Redinger

Scanning tunnelling microscopy measurements reveal grain dependent changes in surface state density and workfunctions on polycrystalline CH3NH3PbI3 absorbers.


2004 ◽  
Vol 100 (1-2) ◽  
pp. 283-286 ◽  
Author(s):  
C. Malagù ◽  
M.C. Carotta ◽  
H. Fissan ◽  
V. Guidi ◽  
M.K. Kennedy ◽  
...  

1988 ◽  
Vol 27 (Part 2, No. 11) ◽  
pp. L2177-L2179 ◽  
Author(s):  
Hideki Hasegawa ◽  
Toshiya Saitoh ◽  
Seiichi Konishi ◽  
Hirotatsu Ishii ◽  
Hideo Ohno

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