Dielectric properties and electrical conduction of high-k LaGdO3ceramics

2012 ◽  
Vol 111 (10) ◽  
pp. 102811 ◽  
Author(s):  
S. P. Pavunny ◽  
R. Thomas ◽  
A. Kumar ◽  
N. M. Murari ◽  
R. S. Katiyar
2019 ◽  
Vol 6 (1) ◽  
pp. 121-127 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo ◽  
Jiang Lu

Author(s):  
Jean-Pierre Ganne ◽  
Michel Pate ◽  
Olivier Durand ◽  
Claude Grattepain
Keyword(s):  

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.


2005 ◽  
Vol 61 (a1) ◽  
pp. c328-c328
Author(s):  
A. Zakrassov ◽  
Y. Sheynin ◽  
S. Berger ◽  
M. Botoshansky ◽  
A. Keren ◽  
...  

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