Electronic transport in Au/SrTiO3/Au tunnel junctions grown using pulsed laser deposition

2012 ◽  
Author(s):  
K. Pramod ◽  
Ramesh Babu Gangineni
Keyword(s):  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Tunnel Junctions ◽  
Pulsed Laser ◽  
Laser Deposition

Ferromagnetism and electronic transport in epitaxial Ge1−xFexTe thin film grown by pulsed laser deposition

2013 ◽  
Vol 102 (10) ◽  
pp. 102402 ◽  
Author(s):  
J. D. Liu ◽  
X. S. Miao ◽  
F. Tong ◽  
W. Luo ◽  
Z. C. Xia
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Laser Deposition

Highly Conductive In4Sn3O12 Films Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 1102 ◽  
Author(s):  
David H O'Neil ◽  
Vladimir Kuznetsov ◽  
Robert Jacobs ◽  
Martin O Jones ◽  
Peter P Edwards
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates

AbstractHighly conductive (> 103 Ω-1cm-1) and transparent (∼ 90%) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass substrates held at a temperature of 500°C under varying pressures of oxygen (2.5 mTorr ≤ PO2 ≤ 15 mTorr). The crystallinity and the roughness of the films were found to increase with the pressure of oxygen used during deposition. Electron concentrations of the order of 5×1020 cm-3 and mobilities as high as 30 cm2V-1s-1 were derived from the measurement of Hall coefficients. Both the electronic transport and optical properties of the films were found to be strongly sensitive to the pressure of oxygen used during deposition.

scholarly journals Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

2015 ◽  
Vol 107 (23) ◽  
pp. 232103 ◽  
Author(s):  
Vladimir L. Kuznetsov ◽  
Alex T. Vai ◽  
Malek Al-Mamouri ◽  
J. Stuart Abell ◽  
Michael Pepper ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Si Doped ◽  
Doped Zno

Germanium Nanostructures Fabricated by PLD

1998 ◽  
Vol 536 ◽  
Author(s):  
K. M. Hassan ◽  
A. K. Sharma ◽  
J. Narayan ◽  
J. F. Muth ◽  
C. W. Teng
Keyword(s):  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Single Layer ◽  
Laser Deposition ◽  
Transmission Electron ◽  
The Matrix ◽  
Average Size ◽  
Substrate Temperatures

AbstractQuantum confined nanostructures of semiconductors such as Ge and Si are being actively studied due to their interesting optical and electronic transport properties. We fabricated Ge nanostructures buried in the matrix of polycrystalline-AIN grown on Si(111) by pulsed laser deposition at lower substrate temperatures than that used in previous studies. The characterization of these structures was performed using high resolution transmission electron microscopy (HRTEM), photoluminescence and Raman spectroscopy. HRTEM observations show that the Ge islands are single crystal with a pyramidal shape. The average size of Ge islands was determined to be 15 nm, considerably smaller than that produced by other techniques. The Raman spectrum reveals a peak downward shift, upto 295 cm−1, of the Ge-Ge mode caused by quantum confinement in the Ge-dots. Photoluminescence (PL) was observed both with a single layer of Ge nanodots embedded in the AlN matrix and from ten layers of dots interspersed with AIN. The PL of the dots was blue shifted by ˜0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ˜1.0 eV. The full width at half maximum (FWHM) of the peak was 13 meV, for the single layer and 8 meV for the ten layered sample, indicating that the Ge nanodots are fairly uniform in size, which was found to be consistent with our HRTEM results. The importance of pulsed laser deposition (PLD) in fabricating novel nanostructures is discussed.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes
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