On the variation of the interfacial tension with cluster size in connection to homogeneous nucleation from the vapor phase

1995 ◽  
Vol 102 (2) ◽  
pp. 1094-1095 ◽  
Author(s):  
Willem K. Kegel
Keyword(s):  
Interfacial Tension ◽  
Vapor Phase ◽  
Cluster Size ◽  
Homogeneous Nucleation

The Crystal-Melt Interface in Si or Ge

1995 ◽  
Vol 398 ◽  
Author(s):  
Frans Spaepen ◽  
Yan Shao
Keyword(s):  
Thin Film ◽  
Interfacial Tension ◽  
Temperature Dependence ◽  
Homogeneous Nucleation ◽  
Bulk Liquid ◽  
Temperature Dependent ◽  
Interfacial Tensions ◽  
Comparison Of Results

ABSTRACTFrom the nucleation data on undercooling of liquid Si or Ge, crystal-melt interfacial tensions are calculated. Only a temperature-dependent tension can account simultaneously for the results of experiments on bulk and thin film Si. The observed temperature dependence can be accounted for by reasonable values of the interfacial entropy and enthalpy. The analysis is used to determine the temperature-dependent interfacial tension for Ge. A comparison of results for Ge and Si indicates that homogeneous nucleation has not been achieved in the undercooling of bulk liquid Si.

Condensation by homogeneous nucleation in the vapor phase

1970 ◽  
Vol 57 (11) ◽  
pp. 525-533 ◽  
Author(s):  
Peter P. Wegener ◽  
Jean-Yves Parlange
Keyword(s):  
Vapor Phase ◽  
Homogeneous Nucleation
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