Scanning tunneling microscopy (STM) studies of the chemical vapor deposition of Ge on Si(111) from Ge hydrides and a comparison with molecular beam epitaxy

1994 ◽  
Vol 100 (1) ◽  
pp. 687-704 ◽  
Author(s):  
J. Wintterlin ◽  
Ph. Avouris
Keyword(s):  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Observation ◽  
Atomic And Electronic Structure

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

UHV STM of Cesium on Oxygenated Epitaxial Diamond (100) Films

1998 ◽  
Vol 509 ◽  
Author(s):  
R.E. Stallcup ◽  
J.M. Perez
Keyword(s):  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Synthetic Diamond ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Boron Doped ◽  
Theoretical Predictions

AbstractThe effects of Cs on oxygenated epitaxial diamond (100) films are studied using ultrahigh vacuum (UHV) scanning tunneling microscopy (STM). The epitaxial diamond (100) films are grown on synthetic diamond substrates using chemical vapor deposition and are boron doped. Before Cs deposition and oxygenation, UHV STM imaging of the epitaxial (100) films reveals a (2×l) dimer reconstruction. After Cs deposition and oxygenation, steps with relatively smooth surfaces are observed using positive tip voltages. Using negative tip voltages, many round bright structures approximately 20 Å in diameter are observed on the surface. We propose that these bright structures are Cs atoms or clusters of Cs atoms. Since these structures are only observed for negative tip voltages, they have a large number of empty states. Our observations are compared with recent theoretical predictions for Cs adsorbed on oxygenated diamond (100).

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