scholarly journals Molecular dynamics studies of the melting of butane and hexane monolayers adsorbed on the basal‐plane surface of graphite

1993 ◽  
Vol 98 (5) ◽  
pp. 4128-4141 ◽  
Author(s):  
Flemming Y. Hansen ◽  
J. C. Newton ◽  
H. Taub
Keyword(s):  
Molecular Dynamics ◽  
Basal Plane ◽  
Plane Surface

scholarly journals Investigation of Nanocutting Characteristics of Off-Axis 4H-SiC Substrate by Molecular Dynamics

2018 ◽  
Vol 8 (12) ◽  
pp. 2380 ◽  
Author(s):  
Miaocao Wang ◽  
Fulong Zhu ◽  
Yixin Xu ◽  
Sheng Liu
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Thermal Properties ◽  
Cutting Force ◽  
Slip Plane ◽  
Basal Plane ◽  
High Hardness ◽  
Cutting Depth ◽  
Cutting Direction ◽  
Key Parameter

Silicon carbide (SiC), especially 4H-SiC, is an ideal semiconductor in power electronics due to its outstanding electrical and thermal properties. It has high hardness and brittleness, which makes it difficult to machine. To understand the nanomachining characteristics of off-axis 4H-SiC and provide suggestions on 4H-SiC substrate thinning, the nanocutting process of 4 ∘ off-axis 4H-SiC was simulated by molecular dynamics. The results showed that the stacking fault induced by cutting propagates in the basal plane, and propagates deep into the SiC workpiece when the angle between the cutting direction and the c-axis is smaller than 90 ∘ . Bond reconstruction is found near the slip plane. The cutting depth is also a key parameter in nanocutting. With smaller cutting depth, machining is more like scratching than cutting. With larger cutting depth, more atoms are involved in the cutting, cutting force and workpiece temperature are higher, and more defects exist.

Diffusion and Island formation on the ice Ih basal plane surface

2001 ◽  
Vol 20 (3-4) ◽  
pp. 325-336 ◽  
Author(s):  
Enrique R. Batista ◽  
Hannes Jónsson
Keyword(s):  
Basal Plane ◽  
Plane Surface ◽  
Island Formation

Titration for basal plane versus edge plane surface on graphitic carbons by adsorption

Langmuir ◽  
1993 ◽  
Vol 9 (11) ◽  
pp. 3259-3263 ◽  
Author(s):  
S. G. Chen ◽  
R. T. Yang
Keyword(s):  
Basal Plane ◽  
Plane Surface ◽  
Plane Versus

Molecular dynamics simulations of the diffusion of benzene sub-monolayer films on graphite basal plane surfaces

Carbon ◽  
2009 ◽  
Vol 47 (11) ◽  
pp. 2627-2639 ◽  
Author(s):  
Peter Fouquet ◽  
Mark R. Johnson ◽  
Holly Hedgeland ◽  
Andrew P. Jardine ◽  
John Ellis ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Basal Plane ◽  
Monolayer Films ◽  
Graphite Basal Plane ◽  
Dynamics Simulations

Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching

2012 ◽  
Vol 717-720 ◽  
pp. 577-580 ◽  
Author(s):  
Shoji Ushio ◽  
Kohei Nakanishi ◽  
Noboru Ohtani ◽  
Tadaaki Kaneko
Keyword(s):  
Basal Plane ◽  
Plane Surface ◽  
Etching Process ◽  
Morphological Instability ◽  
Free Surfaces ◽  
Mesa Structure ◽  
Thermal Etching

The morphological instability appeared at step-free 4H-SiC (0001) surfaces was investigated. The step-free surfaces were fabricated at the bottom of inverted-mesa structure by the method combining a laser digging and Si-vapor etching. By repeated Si-vapor etching treatments, randomly created crater and maze structures were cyclically appeared at the step-free surfaces. These structures were distinctly classifiable by their depths from the step-free surfaces. Crater structures have 0.2 - 0.3 nm depth and maze structures have 0.5 nm depth. The morphological evolutions indicate the process of destruction of the step-free (0001) basal plane and generation of steps from step-free surfaces in the Si-vapor etching process.

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