Erratum: Atom‐ and radical‐surface sticking coefficients measured using resonance‐enhanced multiphoton ionization (REMPI) [J. Chem. Phys. 91, 5037 (1989)]

1989 ◽  
Vol 91 (11) ◽  
pp. 7310-7310
Author(s):  
Robert M. Robertson ◽  
Michel J. Rossi
Keyword(s):  
Multiphoton Ionization ◽  
Chem Phys ◽  
Sticking Coefficients

Atom- and Radical-Surface Sticking Coefficients Measured Using Resonance Enhanced Multiphoton Ionization (REMPI)

1988 ◽  
Vol 131 ◽  
Author(s):  
Robert M. Robertson ◽  
Michel J. Rossi
Keyword(s):  
Stainless Steel ◽  
Ambient Temperature ◽  
Amorphous Silicon ◽  
Silicon Surface ◽  
Steel Surface ◽  
Multiphoton Ionization ◽  
Stainless Steel Surface ◽  
Transient Species ◽  
Sticking Coefficients

ABSTRACTSticking coefficients γ of neutral transient species at ambient temperature were measured using in situ Resonance Enhanced Multiphoton Ionization (REMPI) of the transients in a Knudsen cell. γ for I and CF3I‡ on a stainless steel surface were 0.16 and >0.5, respectively, whereas γ for CF3 on the same surface was measured to <0.01; γof SiH2 on a growing carbon containing amorphous silicon surface was 0.11; this value increased to 0.15 for interaction of SiH2 with a “pure” growing silicon-hydrogen surface, and γ of SiH2‡ on both types of surfaces was found to be >0.5.

Multiphoton ionization of atoms

1975 ◽  
Vol 115 (3) ◽  
pp. 361 ◽  
Author(s):  
N.B. Delone
Keyword(s):  
Multiphoton Ionization

New effects in the multiphoton ionization of atoms

1989 ◽  
Vol 158 (6) ◽  
pp. 215 ◽  
Author(s):  
N.B. Delone ◽  
M.V. Fedorov
Keyword(s):  
Multiphoton Ionization
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