Slow positron beam measurements on GaAs grown by molecular beam epitaxy at low temperatures

1994 ◽  
Author(s):  
N. Hozhabri ◽  
S. C. Sharma ◽  
R. N. Pathak ◽  
K. Alavi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Positron Beam ◽  
Slow Positron

Identification of Vacancy-Type Defects in Molecular Beam Epitaxy-Grown GaAs Using a Slow Positron Beam

1992 ◽  
Vol 31 (Part 1, No. 7) ◽  
pp. 2056-2060 ◽  
Author(s):  
Long Wei ◽  
Shoichiro Tanigawa ◽  
Masashi Uematsu ◽  
Koichi Maezawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Slow Positron

Slow positron beam measurements of Si-doped GaAs on Be-doped GaAs grown by molecular beam epitaxy

1991 ◽  
Author(s):  
Jong-Lam Lee ◽  
Long Wei ◽  
Shoichiro Tanigawa ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Slow Positron ◽  
Si Doped

scholarly journals Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

2016 ◽  
Vol 119 (24) ◽  
pp. 245702 ◽  
Author(s):  
Akira Uedono ◽  
Marco Malinverni ◽  
Denis Martin ◽  
Hironori Okumura ◽  
Shoji Ishibashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Positron Beam ◽  
Mg Doped

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

1996 ◽  
Vol 69 (3) ◽  
pp. 397-399 ◽  
Author(s):  
Albert Chin ◽  
W. J. Chen ◽  
F. Ganikhanov ◽  
G.‐R. Lin ◽  
Jia‐Min Shieh ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

0.8-eV photoluminescence of GaAs grown by molecular-beam epitaxy at low temperatures

1994 ◽  
Vol 49 (7) ◽  
pp. 4689-4694 ◽  
Author(s):  
P. W. Yu ◽  
G. D. Robinson ◽  
J. R. Sizelove ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperatures ◽  
Molecular Beam

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

1997 ◽  
Vol 40 (2) ◽  
pp. 214-218
Author(s):  
Nuofu Chen ◽  
Hongjia He ◽  
Yutian Wang ◽  
Lanying Lin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Single Crystals ◽  
Low Temperatures ◽  
Molecular Beam

Manifestation of the DX Centre in Heavily δ-Doped GaAs(Si)

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Arscott ◽  
M. Missous ◽  
L. Dobaczewski ◽  
P. C. Harness ◽  
D. K. Maude ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electron Concentration ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Wave Functions ◽  
Potential Well ◽  
Electronic Wave ◽  
Hall Measurements ◽  
Electronic Wave Functions

ABSTRACTShubnikov-de Haas and Hall measurements have been performed on singly delta doped GaAs(Si) structures, grown by molecular beam epitaxy, enabling us to study the effects of illumination and temperature upon bulk and individual subband, mobilities and carrier concentrations. In a highly doped sample, where the peak 3D electron concentration approaches 2×1019cm−3, we have observed novel changes in subband transport characteristics, not observed in the lower doped samples, which we attribute to the presence of DX centre phenomena. This paper explains the variations in individual subband transport properties due to a possible shift of the electronic wave functions contained in the potential well. This shift occurs due to a recombination-autoionization(R-A) process involving filled DX centres and free holes upon sample illumination at low temperatures.

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