Modulation technique for measuring diffusion coefficients of Ba in noble gases

1987 ◽  
Vol 87 (1) ◽  
pp. 660-663 ◽  
Author(s):  
T. G. Walker ◽  
K. D. Bonin ◽  
W. Happer
Keyword(s):  
Diffusion Coefficients ◽  
Noble Gases ◽  
Modulation Technique

Diffusion Coefficients of Noble Gases in Water

1969 ◽  
Vol 50 (3) ◽  
pp. 1086-1088 ◽  
Author(s):  
A. J. H. Boerboom ◽  
G. Kleyn
Keyword(s):  
Diffusion Coefficients ◽  
Noble Gases

Longitudinal electron diffusion coefficients in gases: Noble gases

1992 ◽  
Vol 71 (11) ◽  
pp. 5363-5371 ◽  
Author(s):  
J. L. Pack ◽  
R. E. Voshall ◽  
A. V. Phelps ◽  
L. E. Kline
Keyword(s):  
Diffusion Coefficients ◽  
Noble Gases ◽  
Electron Diffusion

Light-induced diffusive pulling (pushing) of lithium atoms into a laser beam. Measurement of diffusion coefficients of lithium in 2P and 2S states in noble gases

1995 ◽  
Vol 115 (3-4) ◽  
pp. 276-282 ◽  
Author(s):  
S.N. Atutov ◽  
B.V. Bondarev ◽  
S.M. Kobtzev ◽  
P.V. Kolinko ◽  
S.P. Podjachev ◽  
...  
Keyword(s):  
Laser Beam ◽  
Diffusion Coefficients ◽  
Noble Gases

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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