Third‐order susceptibility determination by third harmonic generation. II

1983 ◽  
Vol 78 (3) ◽  
pp. 1543-1551 ◽  
Author(s):  
G. R. Meredith ◽  
B. Buchalter ◽  
C. Hanzlik
2018 ◽  
Vol 84 ◽  
pp. 579-585 ◽  
Author(s):  
V.V. Multian ◽  
J. Riporto ◽  
M. Urbain ◽  
Y. Mugnier ◽  
G. Djanta ◽  
...  

1987 ◽  
Vol 61 (4) ◽  
pp. 221-225 ◽  
Author(s):  
M. Sinclair ◽  
D. Moses ◽  
A.J. Heeger ◽  
K. Vilhelmsson ◽  
B. Valk ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3194
Author(s):  
Adrian Petris ◽  
Petronela Gheorghe ◽  
Tudor Braniste ◽  
Ion Tiginyanu

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.


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