Effect of the local exchange‐correlation correction to electron density on the properties of inorganic solids

1981 ◽  
Vol 74 (11) ◽  
pp. 6319-6341 ◽  
Author(s):  
M. Kucharczyk ◽  
S. Olszewski
1972 ◽  
Vol 6 (12) ◽  
pp. 4367-4370 ◽  
Author(s):  
J. F. Janak ◽  
A. R. Williams ◽  
V. L. Moruzzi

2007 ◽  
Vol 128 ◽  
pp. 219-224 ◽  
Author(s):  
P.P. Kostrobiy ◽  
Bogdan M. Markovych ◽  
Yuri Suchorski

An external electrostatic field of the order of a few tens of a volt per nanometer causes significant changes in the electron density distribution near a metal surface. Because of differing electronic distributions and varying responses of electrons to the applied field for various metals, the resulting local field distribution in the close vicinity of the surface should depend on the electronic properties of the particular metal, even for flat surfaces. Field-free and field-modified electron density distributions for different metal surfaces were calculated using the functional integration method. This approach enables the exchange-correlation effects to be correctly considered and makes it possible to account for the proper field-effect for broad field ranges without using the perturbation theory. The results of calculations are compared with the field-ion microscopic observations.


1971 ◽  
Vol 4 (14) ◽  
pp. 2064-2083 ◽  
Author(s):  
L Hedin ◽  
B I Lundqvist

2020 ◽  
Vol 6 (1) ◽  
Author(s):  
Maituo Yu ◽  
Shuyang Yang ◽  
Chunzhi Wu ◽  
Noa Marom

AbstractWithin density functional theory (DFT), adding a Hubbard U correction can mitigate some of the deficiencies of local and semi-local exchange-correlation functionals, while maintaining computational efficiency. However, the accuracy of DFT+U largely depends on the chosen Hubbard U values. We propose an approach to determining the optimal U parameters for a given material by machine learning. The Bayesian optimization (BO) algorithm is used with an objective function formulated to reproduce the band structures produced by more accurate hybrid functionals. This approach is demonstrated for transition metal oxides, europium chalcogenides, and narrow-gap semiconductors. The band structures obtained using the BO U values are in agreement with hybrid functional results. Additionally, comparison to the linear response (LR) approach to determining U demonstrates that the BO method is superior.


1992 ◽  
Vol 46 (9) ◽  
pp. R5320-R5323 ◽  
Author(s):  
Qingsheng Zhao ◽  
Robert G. Parr

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