Some approximate energy relationships for ground and excited states of diatomic molecules and molecular ions

1978 ◽  
Vol 69 (1) ◽  
pp. 491 ◽  
Author(s):  
Peter Politzer
2007 ◽  
Vol 42 (11) ◽  
pp. 1496-1503 ◽  
Author(s):  
Eduardo A. Solano Espinoza ◽  
Elena Stashenko ◽  
Jairo Martínez ◽  
Uriel Mora ◽  
Vladimir Kouznetsov

2018 ◽  
Vol 51 (22) ◽  
pp. 225601
Author(s):  
Hiroyuki Shimada ◽  
Shinichirou Minemoto ◽  
Kazma Komatsu ◽  
Wataru Komatsubara ◽  
Shintaro Yoshida ◽  
...  

The ionization of methane and the methyl halide molecules by essentially mono-energetic electrons, produced by pulse techniques, has been studied in detail in a mass spectrometer. It has been possible to detect for the first time the production of the molecular ions of these compounds in most of their excited electronic states. In the cases of the ions of methyl bromide and iodide we have been able to resolve the components of the doublets of the ground 2 E states which arise from spin-orbital interactions in these molecular ions. The several ionization potentials of each of the molecules which refer to the formation of the ions in their different electronic excited states have been measured. These new results are of interest in that they enable the molecular-orbital theories of the electronic structures of methane and the methyl halides to be assessed. They also provide support for recent theories of the origin of the ions in the mass spectra of organic compounds. It has been demonstrated that there is a monotonic relationship between the ionization potential of electrons in the [ σα 1 ] bonding orbital localized in the C— X bond of these molecules and the corresponding bond dissociation energy.


1988 ◽  
Vol 128 ◽  
Author(s):  
G. F. Cerofolini ◽  
L. Meda ◽  
C. Volpones

ABSTRACTThis paper deals with the implantation of molecular ions in silicon. The ‘molecular’ effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, is weak for light molecules (e.g., H2) and for heavy diatomic molecules (e.g., Sb2 and Bi2), but, for instance, it is strong for C6H6 at energy per atomic mass of the order of 1 keV/amu. Binary collision calculations are used to give a pictorial view of the phenomena occurring along the ion path, and to predict superadditivity and damage columnarity. The increase of pressure and temperature to extreme conditions by implantation of molecular ions is discussed.


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