On the temperature dependence of the recombination fluorescence of photoionized tryptophan in aqueous glasses: Consequences of electron tunneling

1975 ◽  
Vol 63 (3) ◽  
pp. 1285-1288 ◽  
Author(s):  
Johan Moan ◽  
Ken K. Ho ◽  
Larry Kevan
Keyword(s):  
Temperature Dependence ◽  
Electron Tunneling ◽  
Recombination Fluorescence

Temperature dependence of the inelastic electron tunneling

2006 ◽  
Vol 32 (9) ◽  
pp. 727-734
Author(s):  
H. Nishioka ◽  
T. Yamato ◽  
T. Kakitani
Keyword(s):  
Temperature Dependence ◽  
Electron Tunneling ◽  
Inelastic Electron ◽  
Inelastic Electron Tunneling

scholarly journals Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

2010 ◽  
Vol 49 (1) ◽  
pp. 014001 ◽  
Author(s):  
Yoko Sakurai ◽  
Jun-ichi Iwata ◽  
Masakazu Muraguchi ◽  
Yasuteru Shigeta ◽  
Yukihiro Takada ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependence ◽  
Electron Tunneling ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Si Quantum Dots

scholarly journals Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes

2010 ◽  
Vol 2010 ◽  
pp. 1-7 ◽  
Author(s):  
P. Pipinys ◽  
V. Lapeika
Keyword(s):  
Temperature Dependence ◽  
Leakage Current ◽  
Reverse Bias ◽  
Electron Tunneling ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Model Temperature

Temperature-dependent reverse-bias current-voltage characteristics obtained by other researchers for Schottky diodes fabricated on GaN are reinterpreted in terms of phonon-assisted tunneling (PhAT) model. Temperature dependence of reverse-bias leakage current is shown could be caused by the temperature dependence of electron tunneling rate from traps in the metal-semiconductor interface to the conduction band of semiconductor. A good fit of experimental data with the theory is received in a wide temperature range (from 80 K to 500 K) using for calculation the effective mass of 0.222 . and for the phonon energy the value of 70 meV. The temperature and bias voltages dependences of an apparent barrier height (activation energy) are also explicable in the framework of the PhAT model.

Work function and temperature dependence of electron tunneling through an N-type perylene diimide molecular junction with isocyanide surface linkers

Nanoscale ◽  
2018 ◽  
Vol 10 (3) ◽  
pp. 964-975 ◽  
Author(s):  
Christopher E. Smith ◽  
Zuoti Xie ◽  
Ioan Bâldea ◽  
C. Daniel Frisbie
Keyword(s):  
Temperature Dependence ◽  
Work Function ◽  
Electron Tunneling ◽  
Variable Temperature ◽  
Perylene Diimide ◽  
Molecular Junction

Experiments on n-type perylene diimide nanojunctions with different contacts at variable temperature allow discrimination between tunneling and hopping mechanisms.

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