A study of nuclear stopping power using proton and pion rapidity distributions in central 60 GeV/nucleon 16O+Au collisions

1992 ◽  
Author(s):  
S. Tonse ◽  
S. I. Chase ◽  
J. W. Harris ◽  
G. Odyniec ◽  
G. Rai ◽  
...  
Keyword(s):  
Stopping Power ◽  
Nuclear Stopping ◽  
Rapidity Distributions

scholarly journals Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
C. R. Wie ◽  
T. Vreeland ◽  
T. A. Tombrello
Keyword(s):  
Surface Layer ◽  
Energy Loss ◽  
Ion Irradiation ◽  
Stopping Power ◽  
High Dose ◽  
Double Crystal ◽  
Saturation Phenomenon ◽  
Nuclear Stopping ◽  
X Ray ◽  
Dose Irradiation

ABSTRACTMeV ion irradiation effects on semiconductor crystals, GaAs(100) and Si (111) and on an insulating crystal CaF2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs (100) saturates to a certain level after a high dose irradiation (typically 1015/cm2), resulting in a uniform lattice spacing about 0.4% larger than the original spacing of the lattice planes parallel to the surface. The layer of uniform strain corresponds in depth to the region where electronic energy loss is dominant over nuclear collision energy loss. The saturated strain level is the same for both p-type and n-type GaAs. In the early stages of irradiation, the strain induced in the surface is shown to be proportional to the nuclear stopping power at the surface and is independent of electronic stopping power. The strain saturation phenomenon in GaAs is discussed in terms of point defect saturation in the surface layer.An isochronal (15 min.) annealing was done on the Cr-doped GaAs at temperatures between 200° C and 700° C. The intensity in the diffraction peak from the surface strained layer jumps at 200° C < T ≤ 300° C. The strain decreases gradually with temperature, approaching zero at T ≤ 500° C.The strain saturation phenomenon does not occur in the irradiated Si. The strain induced in Si is generally very low (less than 0.06%) and is interpreted to be mostly in the layers adjacent to the maximum nuclear stopping region, with zero strain in the surface layer. The data on CaF2 have been analysed with a kinematical x-ray diffraction theory to get quantitative strain and damage depth profiles for several different doses.

scholarly journals Ion Beam Modification of PVDC and Pe Polymers

1995 ◽  
Vol 396 ◽  
Author(s):  
A. L. Evelyn ◽  
D. Ila ◽  
J. Fisher ◽  
D. B. Poker
Keyword(s):  
Chemical Structure ◽  
Microprobe Analysis ◽  
Ion Beam ◽  
Electronic Energy ◽  
Alpha Particles ◽  
Stopping Power ◽  
Nuclear Stopping ◽  
Resistivity Measurements ◽  
Ion Beam Modification ◽  
Raman Microprobe

AbstractThe electronic and nuclear stopping effects produced by MeV ion bombardment in polyvinylidine chloride (PVDC) and polyethylene (PE) are separated by stacking thin films of the polymers. The resulting multi-layer laminates of each polymer were bombarded with 3.5 MeV alpha particles. The energy of the incident ions was selected, using TRIM, such that the first layers experienced most of the effects of the electronic energy deposited and the last layers received most of the effects of the nuclear stopping power. The changes in the conductance and the chemical structure of each layer were measured by direct resistivity measurements and Raman microprobe analysis.

Nuclear stopping power

1987 ◽  
Vol 196 (4) ◽  
pp. 399-403 ◽  
Author(s):  
S. Frankel ◽  
W. Frati
Keyword(s):  
Stopping Power ◽  
Nuclear Stopping

ESTIMATION ON STOPPING POWERS OF SUPERHEAVY ION WITH Z=120 AND A=300 IN SEVERAL MEDIA

2010 ◽  
Vol 19 (05n06) ◽  
pp. 1117-1124 ◽  
Author(s):  
Y. H. CHUNG
Keyword(s):  
Energy Region ◽  
Stopping Power ◽  
Nuclear Stopping ◽  
The Media ◽  
Solid Compounds

Stopping powers of superheavy ion with Z=120 and A=300 have been estimated in several media in the energy region 0.0177≤E/A≤0.141 MeV / amu . The electronic and nuclear stopping powers of ions with 6≤Z≤92 calculated by SRIM have been used to estimate the corresponding stopping powers of the superheavy ion. The media included two solid compounds (UF4 and Mylar) and two gases ( He and butane). The results were compared with those deduced from Northcliffe and Schilling's stopping-power tables.

Nuclear stopping power for ultrarelativistic protons

1984 ◽  
Vol 145 (3-4) ◽  
pp. 167-170 ◽  
Author(s):  
J. Hüfner ◽  
A. Klar
Keyword(s):  
Stopping Power ◽  
Nuclear Stopping

scholarly journals Nuclear stopping power at high energies

1985 ◽  
Vol 32 (3) ◽  
pp. 619-636 ◽  
Author(s):  
S. Daté ◽  
M. Gyulassy ◽  
H. Sumiyoshi
Keyword(s):  
Stopping Power ◽  
Nuclear Stopping ◽  
High Energies

Empirical relations for nuclear stopping power

1980 ◽  
Vol 41 (1) ◽  
pp. 31-33 ◽  
Author(s):  
F.S. Garnir-Monjoie ◽  
H.P. Garnir
Keyword(s):  
Stopping Power ◽  
Nuclear Stopping ◽  
Empirical Relations
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