High frequency modulation of quantum well heterostructure diode lasers by carrier heating in microwave electric field

1991 ◽  
Author(s):  
S. A. Gurevich ◽  
I. I. Filatov ◽  
B. M. Gorbovitsky ◽  
V. B. Gorfinkel
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Frequency Modulation ◽  
High Frequency ◽  
Diode Lasers ◽  
Carrier Heating

TUNNEL INJECTION LASERS

1998 ◽  
Vol 09 (04) ◽  
pp. 847-866
Author(s):  
PALLAB BHATTACHARYA
Keyword(s):  
Quantum Well ◽  
High Frequency ◽  
Auger Recombination ◽  
Injection Laser ◽  
Gain Compression ◽  
Carrier Heating ◽  
Hot Carrier ◽  
Quantum Well Laser ◽  
Tunnel Injection ◽  
Carrier Population

Carrier heating in conventional quantum well lasers can lead to several deleterious effects and are related to the transport and thermalization characteristics of injected carriers. The properties of a quantum well laser in which the electrons are directly transported to the lasing subband by tunneling is described here. The resulting device — a tunnel injection laser — is shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better high frequency modulation characteristics when compared to conventional lasers. All these improvements are attributed to the reduction of hot-carrier population in the active region of the laser. Results are presented here for lasers made with GaAs — and InP — based heterostructure systems.

High frequency modulation of strained layer multiple quantum well optical amplifiers

1991 ◽  
Vol 27 (1) ◽  
pp. 62-64 ◽  
Author(s):  
U. Koren ◽  
B.I. Miller ◽  
M.G. Young ◽  
T.L. Koch ◽  
R.M. Jopson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Frequency Modulation ◽  
High Frequency ◽  
Optical Amplifiers ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Strained Layer

scholarly journals Энергопотребление при высокочастотной модуляции неохлаждаемого InGaAs/GaAs/AlGaAs-микродискового лазера

2021 ◽  
Vol 47 (13) ◽  
pp. 28
Author(s):  
А.Е. Жуков ◽  
Э.И. Моисеев ◽  
А.М. Надточий ◽  
А.C. Драгунова ◽  
Н.В. Крыжановская ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Power Consumption ◽  
Frequency Modulation ◽  
High Frequency ◽  
Optical Signal

The energy consumption of a microdisk laser with InGaAs/GaAs quantum well-dots operating uncooled under high-frequency modulation was investigated. For a microlaser with a diameter of 20 μm, the lowest power consumption of 1.6 pJ was obtained per one bit of data transmitted using an optical signal.

High-frequency modulation and bandwidth limitations of GaInNAs double-quantum-well lasers

2006 ◽  
Vol 88 (5) ◽  
pp. 051103 ◽  
Author(s):  
Y. Q. Wei ◽  
J. S. Gustavsson ◽  
Å. Haglund ◽  
P. Modh ◽  
M. Sadeghi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Frequency Modulation ◽  
High Frequency ◽  
Quantum Well Lasers ◽  
Double Quantum ◽  
Double Quantum Well
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