Dislocation density variations in HgCdTe films grown by dipping liquid phase epitaxy: Effects on metal-insulator-semiconductor properties

1991 ◽  
Author(s):  
D. Chandra ◽  
J. H. Tregilgas ◽  
M. W. Goodwin
Keyword(s):  
Liquid Phase ◽  
Dislocation Density ◽  
Liquid Phase Epitaxy ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Properties

Effects of Defects on Metal-Insulator-Semiconductor Properties of HgCdTe Films Grown by Liquid Phase Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
Dipankar Chandra ◽  
Michael W. Goodwin
Keyword(s):  
Liquid Phase ◽  
Dislocation Density ◽  
Liquid Phase Epitaxy ◽  
Hall Mobility ◽  
Low Frequency ◽  
Density Level ◽  
Cutoff Wavelength ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Storage Times

ABSTRACTA comprehensive study of all materials parameters influencing metal-insulator-semiconductor (MIS) properties of n-type HgCdTe films grown by liquid phase epitaxy from tellurium rich melts was conducted. When the epitaxy process was optimized to grow films free of inclusions and terracing, the first indications of the MIS properties to be expected could be obtained from the temperature dependence of the Hall electron mobility.Films displaying an anomalous dependence of the Hall mobility on temperature yielded non-classical low frequency MIS properties with little or no measurable ‘dark’ storage times (< 2×10−6 second). The MIS performance of these films appeared relatively independent of other materials parameters; remaining, for example, virtually unaffected by the film dislocation density changing between 5×104 and 2 × 106/cm2.Films displaying a classical dependence of the Hall mobility on temperature yielded drastically improved classical high frequency MIS properties. For these films, the MIS performance appeared almost exclusively dependent on dislocation density levels as long as the donor density remained lower than 1×1015/cm3. The dark storage time of classical films increased continuously with decreasing dislocation density levels, rising to 100µsec for a dislocation density level of 1 × 105/cm2 for materials with a 77°K cutoff wavelength of 10.5 µm. A simple monotonic relationship could be established between the MIS performance parameters and the dislocation density over the entire measurement span: from 5×104 to 2.5×106/cm2.

scholarly journals Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

2019 ◽  
Vol 685 ◽  
pp. 414-419 ◽  
Author(s):  
Yi-Shu Hsieh ◽  
Chien-Yu Li ◽  
Chang-Min Lin ◽  
Na-Fu Wang ◽  
Jian V. Li ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Semiconductor Diode ◽  
Liquid Phase Deposition ◽  
Metal Insulator ◽  
Insulating Layer ◽  
Metal Insulator Semiconductor

An avalanche photodiode with metal-insulator-semiconductor properties

2001 ◽  
Vol 35 (1) ◽  
pp. 117-121
Author(s):  
Z. Ya. Sadygov ◽  
T. M. Burbaev ◽  
V. A. Kurbatov
Keyword(s):  
Avalanche Photodiode ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Properties

Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide

2007 ◽  
Vol 46 (8A) ◽  
pp. 5119-5121 ◽  
Author(s):  
Gow-Huei Yang ◽  
Jun-Dar Hwang ◽  
Chih-Hsueh Lan ◽  
Chien-Mao Chan ◽  
Hone-Zem Chen ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Liquid Phase Deposition ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Ultraviolet Photodetectors
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