Lateral field effect in focused-ion-beam written in-plane-gated systems

1991 ◽  
Author(s):  
A. D. Wieck ◽  
A. Fischer ◽  
K. Ploog
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Lateral Field

Focused ion-beam implanted lateral field-effect transistors on bulk silicon

1997 ◽  
Vol 82 (9) ◽  
pp. 4616-4620 ◽  
Author(s):  
C. Crell ◽  
S. Friedrich ◽  
H.-U. Schreiber ◽  
A. D. Wieck
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Bulk Silicon ◽  
Lateral Field

scholarly journals Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)

2017 ◽  
Vol 23 (5) ◽  
pp. 916-925
Author(s):  
Pritesh Parikh ◽  
Corey Senowitz ◽  
Don Lyons ◽  
Isabelle Martin ◽  
Ty J. Prosa ◽  
...  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Three Dimensional ◽  
Atom Probe ◽  
Physical Structure ◽  
Oxide Semiconductor ◽  
Device Performance

AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

A Study of Photoelectron Emission Microscopy Contrast Mechanisms Relevant to Microelectronics

2002 ◽  
Author(s):  
Vincent Ballarotto ◽  
Karen Siegrist ◽  
Ellen Williams ◽  
William Vanderlinde
Keyword(s):  
Photon Energy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Photoelectron Emission ◽  
Lateral Field ◽  
Edge Contrast ◽  
Emission Microscopy ◽  
Photoelectron Emission Microscopy ◽  
Near Threshold

Abstract We report on a quantitative investigation of doping-induced contrast and topography-induced contrast in photoelectron emission microscopy (PEEM). Calibration samples were fabricated using standard photolithography and focused ion beam writing to test both types of contrast. Using a near-threshold light source, we find that the doping-induced contrast increases monotonically with B concentration over the measured range of 1017 – 2x1020 cm-3. The variation in doping-induced contrast as incident photon energy is varied was also investigated. Optimal doping-induced contrast and PEEM sensitivity is achieved by imaging with photon energy slightly above the highest nominal photothreshold of interest. The photoemission model, based on near-threshold emission, used to describe doping-induce contrast gives good agreement with the measured intensities. Thus, measuring the relative intensity ratio provides a robust technique for determining doping levels. Topography-induced contrast was investigated by imaging Ti samples of various step heights (75, 150, 290, and 550 nm). Image data suggests that edge contrast increases with step height. Numerical simulations show that non-uniform electrostatic fields at step edge are responsible for this contrast. Experimentally, we systematically vary the lateral field strength and show that edge contrast can be controlled. This technique could be useful in failure analysis by identifying breaks in metal lines.

Focused Ion Beam Exposure of Ultrathin Electron-Beam Resist for Nanoscale Field-Effect Transistor Contacts Formation

2021 ◽  
Vol 26 (5) ◽  
pp. 353-362
Author(s):  
K.A. Tsarik ◽  
Keyword(s):  
Field Effect ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Dielectric Substrate ◽  
Silicon Nanostructures ◽  
Metal Contacts ◽  
Ion Beam Lithography ◽  
Speed Performance ◽  
Optical Electron

The lithographic methods are used to form contacts for nanostructures smaller than 100 nm , in part, e-beam lithography and focused ion beam lithography with the use of electron-sensitive resist. Focused ion beam lithography is characterized by greater susceptibility to resist, high value of backward scattering, proximity effect, and best ratio of speed performance and contrast to exposed elements’ minimal size, compared to e-beam lithography. In this work, a method of ultrathin resist exposure by focused ion beam is developed. Electron-sensitive resist thickness dependence on increase of its toluene dilution was established. It was shown that electron-sensitive resist thinning down to 30 μm based on α-chloro-methacrylate with α-methylstyrene allows the 500-nm gapped metal contacts formation over a span of 30 μm. Silicon nanostructures within metallic nanoscale gap on dielectric substrate have been obtained. The geometry of obtained nanostructures was studied by optical, electron, ion, and probe microscopy. It has been established that it is possible to not use additional alignment keys when nanoscale field-effect transistors are created based on silicon nanostructures.

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