scholarly journals Transmission electron microscopy structure and platinum-like temperature coefficient of resistance in a ruthenate-based thick film resistor with copper oxide

2000 ◽  
Vol 88 (2) ◽  
pp. 1124-1128 ◽  
Author(s):  
J. C. Jiang ◽  
Gary M. Crosbie ◽  
W. Tian ◽  
K. K. Cameron ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Copper Oxide ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Temperature Coefficient Of Resistance ◽  
Film Resistor ◽  
Transmission Electron ◽  
Thick Film Resistor

Evaluation of Glass Frits for Development of Lead-Free Thick Film Resistor

2010 ◽  
Vol 2010 (1) ◽  
pp. 000752-000759
Author(s):  
Xudong Chen ◽  
W. Kinzy Jones
Keyword(s):  
Electrical Properties ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Glass Frit ◽  
Lead Free ◽  
Temperature Coefficient Of Resistance ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
Glass Compositions ◽  
Free Glass

Glass frit is a major component of thick film resistor (TFR) for the production of hybrid circuits. More than thirty commercial lead-free glass frits with different compositions have been evaluated for developing a lead-free thick film resistor that is compatible with typical industry thick film processing and has comparable electrical properties as the lead bearing counterpart. Two glass compositions were selected out of 33 candidates for preparation of RuO2 based TFR inks, which were screen printed on alumina substrates and fired at 850°C. The preliminary results of these resistors showed that the sheet resistance spanned from 400 ohms per square (Ω/□) to 0.4 mega-ohms per square (MΩ/□) with 5–15% RuO2 and the hot temperature coefficient of resistance (HTCR) fell in a range of ±350ppm/°C.

scholarly journals Techniques for the Examination of Thick Film Resistor Microstructures by T.E.M.

1977 ◽  
Vol 4 (2) ◽  
pp. 85-88 ◽  
Author(s):  
D. J. Pedder
Keyword(s):  
Electron Microscopy ◽  
Thick Film ◽  
Mass Analysis ◽  
High Voltage Electron Microscopy ◽  
Film Resistor ◽  
Voltage Electron ◽  
Bismuth Ruthenate ◽  
Transmission Electron ◽  
Thick Film Resistor ◽  
Preparation Techniques

This paper discusses the preparation techniques which can be used for the examination of thick film resistor microstructures by Transmission Electron Microscopy. The application of this technique, including High Voltage Electron Microscopy and Electron Microscope Mass Analysis, to both Ruthenium Dioxide and Bismuth Ruthenate based thick film resistors, is considered.

scholarly journals Thick Film Temperature Sensors Using Standard Pastes

1986 ◽  
Vol 12 (2) ◽  
pp. 91-101 ◽  
Author(s):  
I. Janoska ◽  
M. R. Haskard
Keyword(s):  
Aspect Ratio ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Film Industry ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Temperature Coefficient Of Resistance ◽  
Film Resistor ◽  
Dielectric Layers ◽  
Thick Film Resistor

Standard thick film resistor pastes exhibit changes in their electrical characteristics when printed on top of dielectric layers. Of particular interest is the inherent change in their temperature coefficient of resistance. Simple temperature sensors were formed by deliberately printing thick film resistor pastes on top of larger area dielectric layers. Temperature tests carried out on these devices have shown that by selecting the correct paste combination and resistor aspect ratio stable, repeatable, temperature sensors with good linearity can be manufactured. A comparison is made of these sensors to other commercially available products currently used in the thick film industry.

Microstructure of LaB6-base thick film resistors

1992 ◽  
Vol 7 (8) ◽  
pp. 2225-2229 ◽  
Author(s):  
Z.G. Li ◽  
P.F. Carcia ◽  
P.C. Donohue
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thick Film ◽  
Surface Area ◽  
Ion Milling ◽  
Cross Sectional ◽  
Electrically Conductive ◽  
Transmission Electron ◽  
High Temperature Processing ◽  
Thin Wedge

The microstructure of LaB6-base thick film resistors was investigated by cross-sectional transmission electron microscopy. The specimens were prepared by a technique that polished them to a thin wedge, thus avoiding ion-milling and permitting imaging over a distance of tens of microns. The resistor microstructure contained a finely divided electrically conductive phase of TaB2 and nonconducting crystals of CaTa4O11, formed during high temperature processing of glass and LaB6 ingredients of the thick film ink. Using higher surface area ingredients virtually suppressed the formation of CaTa4O11 crystals, and the microstructure became more uniform. Resistors made with higher surface area intermediates also had better voltage withstanding properties.

Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE

1997 ◽  
Vol 482 ◽  
Author(s):  
K. A. Dunn ◽  
S. E. Babcock ◽  
R. Vaudo ◽  
V. Phanse ◽  
J. Redwing
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thick Film ◽  
Sapphire Substrate ◽  
Basal Plane ◽  
Subgrain Structure ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Spacing

AbstractTransmission electron microscopy (TEM) was used to characterize the microstructure in GaN films deposited by two different methods. An 11 μm thick film was deposited directly on a sapphire substrate by HVPE; an 8 μm thick film was deposited on a 15 nm buffer layer of AIN on sapphire by MOVPE. The dislocation densities in the top layer of the HVPE and MOVPE ilms were ∼109 cm-2 and ∼5 x 109 cm-2 respectively. In the HVPE film this was almost exclusively threading dislocations (TDs), ∼70% of which had edge character. In addition to the TDs, the MOVPE sample also contained an appreciable number of dislocations lying in the basal plane. The microstructure of each film was dominated by a subgrain structure of slightly misoriented cells. In the MOVPE specimen, approximately 90% of the TDs were associated with subgrain walls, whereas only approximately 75% of the dislocations in the HVPE specimen were associated with walls. Both the HVPE and MOVPE samples experienced 40% coarsening of the cells through the thickness of the film. The subgrains of the MOVPE sample were 75% smaller than those in the HVPE sample (350 and 1300 nm, respectively). The average dislocation spacing in the walls was 50% smaller in the MOVPE sample than in the HVPE sample (82 and 180 nm, respectively).

Microstructural glass modifications in as-fired and high-voltage-surged RuO2-based thick film resistors

1991 ◽  
Vol 6 (8) ◽  
pp. 1729-1735 ◽  
Author(s):  
Kenji Adachi ◽  
Sadahiro Iida ◽  
Juji Ishigame ◽  
Shyu Sekihara
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thick Film ◽  
High Voltage ◽  
Glass Matrix ◽  
Local Formation ◽  
Structural Modifications ◽  
Transmission Electron ◽  
Lattice Images ◽  
Glass Interface

Electrical conduction in thick film resistors has been studied, and microstructures, especially around conducting RuO2 phases in a lead-borosilicate glass matrix in as-fired and high-voltage-surged thick film resistors, have been observed in detail using transmission electron microscopy. Lattice images of as-fired thick film resistors have suggested the presence of subtle structural modifications in the very thin area across the RuO2/glass interface, whereas in the glass matrix very small dot-like contrasts on the order of 1 nm were occasionally observed and were interpreted as being small crystallites or Ru clusters. Heavy electrical loadings of thick film resistors were found to induce the local formation of plate-like crystals in glass, which were identified by electron diffraction to be a slightly modified anorthite. The significance of these observations in terms of the conduction network and the degradation due to the electrical overloading of thick film resistors are discussed.

Analysis of Lattice Defects in an Epitaxial PbTiO3 Thick Film by Transmission Electron Microscopy

2013 ◽  
Vol 566 ◽  
pp. 171-174
Author(s):  
Kenta Aoyagi ◽  
Takanori Kiguchi ◽  
Yoshitaka Ehara ◽  
Hiroshi Funakubo ◽  
Toyohiko J. Konno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thick Film ◽  
Strain Relaxation ◽  
Stacking Faults ◽  
Local Strain ◽  
Transmission Electron ◽  
Unit Cells ◽  
High Resolution Tem ◽  
Measured Strain

The microstructure of an epitaxial PbTiO3 thick film was investigated by using transmission electron microscopy (TEM). An analysis of bright-field TEM (BFTEM) images revealed the existence of displacements along the [00 direction of PbTiO3. High-resolution TEM (HRTEM) observation indicated that stacking faults parallel to the (001) plane of PbTiO3 are formed in the thick film. Local strain fields around the stacking faults were quantified by geometric phase analysis of the HRTEM image. The measured strain suggested the presence of a pair of extrinsic and intrinsic stacking faults. The distance between an extrinsic stacking fault and an intrinsic one corresponds to two unit cells along the [00 direction of PbTiO3. The formation of these stacking faults is considered to be associated with the strain relaxation of the film.

scholarly journals Aqueous Extract of Saraca indica Leaves in the Synthesis of Copper Oxide Nanoparticles: Finding a Way towards Going Green

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Kollur Shiva Prasad ◽  
Alakananda Patra ◽  
Govindaraju Shruthi ◽  
Shivamallu Chandan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Copper Oxide ◽  
Aqueous Extract ◽  
Copper Oxide Nanoparticles ◽  
Cuo Nanoparticles ◽  
Oxide Nanoparticles ◽  
X Ray ◽  
Transmission Electron ◽  
Varied Size

The present study is mainly aimed at the synthesis of copper oxide nanoparticles of varied size by green synthetic approach. The structural and morphological behavior of as-synthesized CuO nanoparticles were investigated using ultraviolet-visible spectral studies (UV-Vis), Fourier transform-Infrared spectroscopy (FT-IR), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and high-resolution transmission electron microscopy (HRTEM). The reduction of copper ions using aqueous extract of S. indica leaves produces nanoparticles of varied size and morphology. The images from SEM investigation revealed that the particles are spherical in shape with average diameter of 40–70 nm. TEM and HRTEM images clearly indicate the crystallinity and spherical nature of as-synthesized CuO nanoparticles with interplanar distance between two neighboring lattice fringes of 0.315 nm.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

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