Capture cross sections of defect states at the Si/SiO2 interface

2000 ◽  
Vol 88 (2) ◽  
pp. 842-849 ◽  
Author(s):  
J. Albohn ◽  
W. Füssel ◽  
N. D. Sinh ◽  
K. Kliefoth ◽  
W. Fuhs
1996 ◽  
Vol 420 ◽  
Author(s):  
Franc Smole ◽  
Aleč Groznik ◽  
Marko Topič ◽  
Pavle Popović ◽  
Jože Furlan

AbstractBased on measured characteristics of degraded p-i-n structures, simulations of degraded structures were performed using our numerical simulator ASPIN in order to fit and explain pronounced hump-shaped voltage-dependent internal collection efficiency (ICE) characteristics under weak short-wavelength illumination. Agreement with measured hump-shaped ICE characteristics was obtained only if in addition to the introduction of light-induced dangling bond defect states, their capture cross-sections were also increased, in particular capture crosssection for the charged defect states. This causes a change in occupancy of defect states at the p-i interface and front part of the i-layer under forward bias. Consequently, it increases the electric field in the front part of the cell, which results in recovery of the ICE.


1953 ◽  
Vol 31 (3) ◽  
pp. 204-206 ◽  
Author(s):  
Rosalie M. Bartholomew ◽  
R. C. Hawkings ◽  
W. F. Merritt ◽  
L. Yaffe

The thermal neutron capture cross sections of Na23 and Mn55 have been determined using the activation method. The values are 0.53 ± 0.03 and 12.7 ± 0.3 barns respectively with respect to σAul97 = 93 barns. These agree well with recent pile oscillator results. The half-life for Mn56 is found to be 2.576 ± 0.002 hr.


1965 ◽  
Vol 14 (15) ◽  
pp. 585-587 ◽  
Author(s):  
B. E. Springett ◽  
D. J. Tanner ◽  
R. J. Donnelly

2012 ◽  
Vol 388 (10) ◽  
pp. 102004
Author(s):  
Christophe Champion ◽  
Mariel E Galassi ◽  
Philippe F Weck ◽  
Omar Fojón ◽  
Jocelyn Hanssen ◽  
...  

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