Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

2000 ◽  
Vol 88 (1) ◽  
pp. 183-187 ◽  
Author(s):  
N. Grandjean ◽  
B. Damilano ◽  
J. Massies ◽  
G. Neu ◽  
M. Teissere ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Single Crystal ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Crystal Substrate ◽  
Crystal Substrate

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Molecular Beam Epitaxy of Znl-x Cdx Se/ZnSe Heterostructures And Their Optical Properties

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Luo ◽  
N. Samarth ◽  
J. K. Furdyna ◽  
H. Jeon ◽  
J. Ding ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stimulated Emission ◽  
Optically Pumped ◽  
Absorption Coefficients ◽  
Excitonic Absorption ◽  
Lasing Mechanism

ABSTRACTSuperlattices and quantum wells of Znl-xCdxSe/ZnSe, and heterostructures based on ZnSe/CdSe digital alloys have been grown by molecular beam epitaxy (MBE). Their optical properties were studied with particular emphasis on excitonic absorption and photopumped stimulated emission. Excitonic absorption is easily observable up to 400 K, and is characterized by extremely large absorption coefficients (α = 2×105cm−1). Optically pumped lasing action is obtained at room temperature with a typical threshold intensity of 100 kW/cm2. The lasing mechanism in these II-VI quantum wells appears to be quite different from that in the better studied III-V materials: in our case, the onset of stimulated emission occurs before the saturation of the excitonic absorption, and the stimulated emission occurs at an energy lower than that of the excitonic absorption.

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

1990 ◽  
Vol 41 (18) ◽  
pp. 12599-12606 ◽  
Author(s):  
O. Brandt ◽  
L. Tapfer ◽  
R. Cingolani ◽  
K. Ploog ◽  
M. Hohenstein ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Structural And Optical Properties

Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy

1986 ◽  
Vol 49 (3) ◽  
pp. 164-166 ◽  
Author(s):  
M. B. Panish ◽  
H. Temkin ◽  
R. A. Hamm ◽  
S. N. G. Chu
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Electronic structure and optical properties of ultrathin CdS/ZnS quantum wells grown by molecular-beam epitaxy

1999 ◽  
Vol 59 (15) ◽  
pp. 10268-10275 ◽  
Author(s):  
M. Hetterich ◽  
Ch. Märkle ◽  
A. Dinger ◽  
M. Grün ◽  
C. Klingshirn
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam
Sign in / Sign up

Export Citation Format

Share Document