Voltage dependence of the magnetic state in magnetic tunnel junctions

2000 ◽  
Vol 87 (9) ◽  
pp. 5221-5223 ◽  
Author(s):  
C. Heide ◽  
A. I. Krikunov ◽  
Yu. F. Ogrin ◽  
P. E. Zilberman ◽  
R. J. Elliott
Keyword(s):  
Voltage Dependence ◽  
Tunnel Junctions ◽  
Magnetic State ◽  
Magnetic Tunnel Junctions

scholarly journals Nanoscale true random bit generator based on magnetic state transitions in magnetic tunnel junctions

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Alex S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Paulo P. Freitas ◽  
Ricardo Ferreira
Keyword(s):  
Tunnel Junctions ◽  
Magnetic State ◽  
Magnetic Tunnel Junctions ◽  
Vortex State ◽  
Magnetic Vortex ◽  
State Transitions ◽  
Free Layer ◽  
Plane Field ◽  
Random Bit Generator ◽  
Ac Current

Abstract We present an investigation into the in-plane field induced free layer state transitions found in magnetic tunnel junctions. By applying an ac current into an integrated field antenna, the magnetisation of the free layer can be switched between the magnetic vortex state and the quasi-uniform anti-parallel state. When in the magnetic vortex state, the vortex core gyrates a discrete number of times, and at certain frequencies there is a 50% chance of the core gyrating n or n − 1 times, leading to the proposal of a novel nanoscale continuous digital true random bit generator.

Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier

2002 ◽  
Vol 92 (2) ◽  
pp. 1095-1098 ◽  
Author(s):  
H. J. Shim ◽  
I. J. Hwang ◽  
K. S. Kim ◽  
B. K. Cho ◽  
Jin-Tae Kim ◽  
...  
Keyword(s):  
Voltage Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barrier

Stabilization of the easy-cone magnetic state in free layers of magnetic tunnel junctions

2019 ◽  
Vol 100 (18) ◽  
Author(s):  
B. M. S. Teixeira ◽  
A. A. Timopheev ◽  
N. Caçoilo ◽  
S. Auffret ◽  
R. C. Sousa ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic State ◽  
Magnetic Tunnel Junctions

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

2008 ◽  
Vol 205 (8) ◽  
pp. 1847-1850
Author(s):  
H. I. Yim ◽  
S. Y. Lee ◽  
J. Y. Hwang ◽  
J. R. Rhee ◽  
B. S. Chun ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Bias Voltage Dependence

Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers

2006 ◽  
Vol 99 (8) ◽  
pp. 08A902 ◽  
Author(s):  
Byong Sun Chun ◽  
Seung Pil Ko ◽  
Young Keun Kim ◽  
Jae Youn Hwang ◽  
Jang Roh Rhee ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Bias Voltage Dependence

Bias-voltage dependence of magnetoresistance in magnetic tunnel junctions grown on Al2O3 (0001) substrates

2005 ◽  
Vol 86 (10) ◽  
pp. 102506 ◽  
Author(s):  
Sung-Jin Ahn ◽  
Takeharu Kato ◽  
Hitoshi Kubota ◽  
Yasuo Ando ◽  
Terunobu Miyazaki
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Bias Voltage Dependence
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