Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode

2000 ◽  
Vol 87 (9) ◽  
pp. 6385-6387 ◽  
Author(s):  
D. Wang ◽  
M. Tondra ◽  
A. V. Pohm ◽  
C. Nordman ◽  
J. Anderson ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Tunneling Devices ◽  
Memory Applications

Thermal robustness in synthetic antiferromagnetic free layer for magnetic random access memory applications

2006 ◽  
Vol 99 (8) ◽  
pp. 08C911 ◽  
Author(s):  
Takashi Takenaga ◽  
Takeharu Kuroiwa ◽  
Taisuke Furukawa ◽  
Masakazu Taki ◽  
Kiichi Yoshiara ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Free Layer ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Memory Applications

Spin-transfer magnetic random access memory devices with an orthogonal polarizing layer

2014 ◽  
Vol 28 (12) ◽  
pp. 1430005 ◽  
Author(s):  
Huanlong Liu
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Switching Process ◽  
Access Memory ◽  
Time Resolved ◽  
Metal Structures ◽  
Magnetic Random Access Memory ◽  
Memory Applications

Spin-transfer magnetic random access memory (MRAM) devices with a polarizing layer magnetized perpendicular to the free and the reference layers are believed to improve the writing performance by inducing a large spin-transfer torque on the free layer at the beginning of the switching process. Experimental realizations of such devices, both with all-metal structures and magnetic tunnel junctions have been made. Faster switching with less energy cost in the orthogonal devices has been achieved comparing to their collinear counterparts. In addition, the processional switching process in such devices has been demonstrated in both statistical and time-resolved measurements. Although further theoretical and material studies are needed for thorough understanding of the switching process and improving the device performance, the orthogonal MRAM devices hold great potential for memory applications operating at low temperatures as well as those that require fast writing speed.

[Co/Ni]-CoFeB hybrid free layer stack materials for high density magnetic random access memory applications

2016 ◽  
Vol 108 (13) ◽  
pp. 132405 ◽  
Author(s):  
E. Liu ◽  
J. Swerts ◽  
S. Couet ◽  
S. Mertens ◽  
Y. Tomczak ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Free Layer ◽  
Access Memory ◽  
Magnetic Random Access Memory ◽  
Memory Applications
Sign in / Sign up

Export Citation Format

Share Document