Band-gap renormalization and band filling in Si-doped GaN films studied by photoluminescence spectroscopy

1999 ◽  
Vol 86 (8) ◽  
pp. 4400-4402 ◽  
Author(s):  
M. Yoshikawa ◽  
M. Kunzer ◽  
J. Wagner ◽  
H. Obloh ◽  
P. Schlotter ◽  
...  
1999 ◽  
Vol 74 (1) ◽  
pp. 102-104 ◽  
Author(s):  
In-Hwan Lee ◽  
J. J. Lee ◽  
P. Kung ◽  
F. J. Sanchez ◽  
M. Razeghi

2020 ◽  
Vol 12 (23) ◽  
pp. 10097
Author(s):  
Hongni Zhang ◽  
Wenzheng Du ◽  
Tong Zhao ◽  
Rajeev Ahuja ◽  
Zhao Qian

Through Density Functional Theory (DFT), we have unveiled the atomic structures, adsorption characteristics and electronic structures of the poisonous and explosive vapor, m-dinitrobenzene (m-DNB), on pure, defective and various doped AlN nanosheets from a physical perspective. It is found that the adsorption energy, band gap change and sensitivity to the vapor are significantly increased through atomic-scale modification of the nanosheet. The AlN monolayer with Al-N divacancy has the largest adsorption energy and has potential to be utilized as adsorption or filtration materials for m-DNB vapor. The Si-doped AlN nanosheet possesses a much larger band gap change (−0.691 eV) than the pure nanosheet (−0.092 eV) after adsorption and has a moderate adsorption energy, which could be candidate material for explosive vapor sensing. This theoretical work is proposed to provide guidance and clue for experimentalists to develop more effective two-dimensional materials for environmental safety and sustainability.


Optik ◽  
2015 ◽  
Vol 126 (9-10) ◽  
pp. 932-936 ◽  
Author(s):  
M. Daoudi ◽  
H. Kaouach ◽  
I. Dhifallah ◽  
A. Ouerghi ◽  
R. Chtourou

1998 ◽  
Vol 189-190 ◽  
pp. 546-550 ◽  
Author(s):  
R Seitz ◽  
C Gaspar ◽  
T Monteiro ◽  
E Pereira ◽  
M Leroux ◽  
...  

2000 ◽  
Vol 44 (1) ◽  
pp. 37-40 ◽  
Author(s):  
H.Q Zheng ◽  
H Wang ◽  
P.H Zhang ◽  
Z Zeng ◽  
K Radahakrishnan ◽  
...  

2013 ◽  
Vol 740-742 ◽  
pp. 347-350 ◽  
Author(s):  
Anne Henry ◽  
Ivan G. Ivanov ◽  
Erik Janzén ◽  
Tomoaki Hatayama ◽  
Hiroshi Yano ◽  
...  

8H-SiC epilayers grown on small 8H-SiC Lely platelets are investigated optically using photoluminescence spectroscopy. At low temperature the near band gap emission detected in the 2.78 to 2.67 eV range contains sharp lines associated to nitrogen-bound-exciton recombination. Three different no-phonon lines are detected accompanied by their phonon replicas. Free-exciton replicas are also observed which allows the determination of the excitonic band gap. The binding energy of the bound excitons can thus be determined and the ionization energies of the three nitrogen levels in 8H-SiC are estimated and found to be rather shallow compared to the values for other hexagonal polytypes. Additional bound-exciton lines are observed when the experimental photoluminescence temperature is increased.


2005 ◽  
Vol 86 (19) ◽  
pp. 192111 ◽  
Author(s):  
J. D. Ye ◽  
S. L. Gu ◽  
S. M. Zhu ◽  
S. M. Liu ◽  
Y. D. Zheng ◽  
...  
Keyword(s):  
Band Gap ◽  

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