Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant

1999 ◽  
Vol 86 (6) ◽  
pp. 3104-3109 ◽  
Author(s):  
Mihail P. Petkov ◽  
Marc H. Weber ◽  
Kelvin G. Lynn ◽  
Kenneth P. Rodbell ◽  
Stephan A. Cohen
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Hydrogen Silsesquioxane ◽  
Open Volume

scholarly journals Surfaces of colloidal PbSe nanocrystals probed by thin-film positron annihilation spectroscopy

APL Materials ◽  
2013 ◽  
Vol 1 (2) ◽  
pp. 022111 ◽  
Author(s):  
L. Chai ◽  
W. Al-Sawai ◽  
Y. Gao ◽  
A. J. Houtepen ◽  
P. E. Mijnarends ◽  
...  
Keyword(s):  
Thin Film ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy

Characterization of Porous Silicate Low-k Films by Ellipsometric Porosimetry and Variable-energy Positron Annihilation Spectroscopy

2003 ◽  
Vol 788 ◽  
Author(s):  
Kenji Ito ◽  
Yoshinori Kobayashi ◽  
Ryoichi Suzuki ◽  
Toshiyuki Ohdaira ◽  
Runsheng Yu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Positron Annihilation ◽  
Open Porosity ◽  
Average Pore Size ◽  
Relative Dielectric Constant ◽  
Positron Annihilation Spectroscopy ◽  
Dielectric Constants ◽  
Ellipsometric Porosimetry ◽  
Variable Energy

ABSTRACTWe a pplied ellipsometric porosimetry and variable-energy positron annihilation spectroscopy to the pore characterization of spin-on-glass silicon-oxide-backboned porous thin films with different relative dielectric constants between 2.3 and 3.2. It was found that the relative dielectric constant decreases linearly with increasing open porosity deduced by ellipsometric porosimetry. Comparison of the open porosity with the average pore size deduced by positron annihilation lifetime spectroscopy suggested that mesopores less contribute to open porosity and are not so effective in decreasing film relative dielectric constant in comparison with micropores.

scholarly journals The Characterization of MgB2 Thin Film by Slow Positron Annihilation Spectroscopy

2008 ◽  
Vol 17 (2) ◽  
pp. 160-164 ◽  
Author(s):  
C.Y. Lee ◽  
W.N. Kang ◽  
Y. Nagai ◽  
K. Inoue ◽  
M. Hasegawa
Keyword(s):  
Thin Film ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Mgb2 Thin Film

Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy

2005 ◽  
Vol 72 (16) ◽  
Author(s):  
S. Hautakangas ◽  
K. Saarinen ◽  
L. Liszkay ◽  
J. A. Freitas ◽  
R. L. Henry
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Open Volume ◽  
Mg Doped

Investigation of Dual-Beam-Implanted Oxide-Dispersed-Strengthened FeCrAl Alloy by Positron Annihilation Spectroscopy

2012 ◽  
Vol 331 ◽  
pp. 149-163 ◽  
Author(s):  
Reinhard Kögler ◽  
Wolfgang Anwand ◽  
Asta Richter ◽  
Maik Butterling ◽  
A. Mücklich ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Positron Annihilation ◽  
Defect Formation ◽  
Positron Annihilation Spectroscopy ◽  
Vacancy Clusters ◽  
Open Volume ◽  
Dual Beam ◽  
Hardness Increase ◽  
Ods Alloy ◽  
Nuclear Applications

Oxide-dispersion-strengthened (ODS) FeCrAl steel is a class with promising materials to be applied for future nuclear applications. However, radiation damage, especially the formation of vacancy clusters or gas-filled bubbles, may result in hardness increase and the loss of ductility. Positron annihilation spectroscopy (PAS) is demonstrated to be a very useful and non-destructive analysis method to detect and to determine open volume defects of sub-nm size in ODS alloy. Synchronized dual beam implantation of Fe and He ions is performed to simulate the radiation damage caused by (n, α) reactions and to avoid induced activation. For room temperature implantation, i.e. without significant point defect recombination, the differences in the defect formation are shown by comparison between irradiation of ODS alloy and pure Fe bulk. The open volume defects created in ODS alloy are vacancy clusters closely connected with dispersed Y oxide nanoparticles. Their profiles are in reasonable qualitative agreement with the hardness profiles, indicating a relationship between sub-nm vacancy clusters or He bubbles and the hardness of the material. In heat-treated ODS alloy, containing larger vacancy clusters, the radiation induced hardness increase is more distinctive than for as-received ODS alloy. For irradiation at a moderately enhanced temperature of 300°C open volume defects are drastically reduced. The few remaining defects are vacancy clusters of the same type as in as-received ODS alloy. Close to the surface the open volume defects completely disappear. These results are in agreement with the hardness measurements showing little hardness increase in this case. The suitability of ODS-based materials for nuclear applications was verified.

(Invited) Positron Annihilation Spectroscopy on Open-Volume Defects in Group IV Semiconductors

2014 ◽  
Vol 64 (11) ◽  
pp. 241-253 ◽  
Author(s):  
J. Slotte ◽  
F. Tuomisto ◽  
J. Kujala ◽  
A. M. Holm ◽  
N. Segercrantz ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Group Iv ◽  
Group Iv Semiconductors ◽  
Open Volume
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