Recombination processes in doubly capped antimonide-based quaternary thin films

1999 ◽  
Vol 86 (3) ◽  
pp. 1527-1534 ◽  
Author(s):  
Sudesh Saroop ◽  
Jose M. Borrego ◽  
Ronald J. Gutmann ◽  
Greg W. Charache ◽  
Christine A. Wang
Keyword(s):  
Thin Films ◽  
Recombination Processes

Temperature variation of nonradiative carrier recombination processes in high-quality CuGaSe2 thin films grown by molecular beam epitaxy

2000 ◽  
Vol 77 (2) ◽  
pp. 259-261 ◽  
Author(s):  
Kenji Yoshino ◽  
Daisuke Maruoka ◽  
Tetsuo Ikari ◽  
Paul J. Fons ◽  
Shigeru Niki ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Temperature Variation ◽  
Molecular Beam ◽  
High Quality ◽  
Carrier Recombination ◽  
Recombination Processes

Influence of Eu concentration on recombination processes in CaS : Eu 2+ thin films

1994 ◽  
Vol 60-61 ◽  
pp. 923-925 ◽  
Author(s):  
K. S´wiątek ◽  
K. Karpin´ska ◽  
M. Godlewski ◽  
L. Niinisto¨ ◽  
M. Leskela¨
Keyword(s):  
Thin Films ◽  
Recombination Processes

scholarly journals Development of system for automatic measurement of transient photocurrent and thermally stimulated current

2017 ◽  
Vol 37 (1) ◽  
pp. 75
Author(s):  
Asdrubal Antonio Ramirez Botero ◽  
Gerardo Gordillo
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Virtual Instrument ◽  
Automatic Measurement ◽  
Virtual Instrumentation ◽  
Thermally Stimulated Current ◽  
Design And Implementation ◽  
Transient Photocurrent ◽  
Recombination Processes ◽  
Absorbent Layer

This paper presents details of the design and implementation of a system for measuring of thermally stimulated current (TSC) and transient photocurrent (Iph), developed using the Virtual Instrumentation concept. For that we have used National Instrument hardware and the LabView® package as software. The system is controlled by a virtual instrument (VI) which includes facilities to perform measurements of photocurrent keeping the temperature of the sample and the pressure of the chamber of measurement controlled as well as  real time display of the Iph vs t and TSC vs T curves. The system was tested by performing transient photocurrent and TSC measurements on CH3NH3PbI3 thin films that are generally used as absorbent layer of solar cells. This type of characterization is very useful to get information of the  trapping and recombination processes that affect the transport properties of the devices.

scholarly journals Formation Processes of Zinc Excimer Thin Films Due to Ion-Recombination Processes

2014 ◽  
Vol 02 (07) ◽  
pp. 449-456 ◽  
Author(s):  
Li Chen ◽  
Shinichiro Yamashita ◽  
Mitsugi Hamasaki ◽  
Hirotaka Manaka ◽  
Kozo Obara
Keyword(s):  
Thin Films ◽  
Formation Processes ◽  
Recombination Processes ◽  
Ion Recombination

Carrier generation/recombination processes and polaron effect in perovskite manganite thin films

2000 ◽  
Vol 284-288 ◽  
pp. 1912-1913 ◽  
Author(s):  
Guang-Ri Wu ◽  
Masasi Inoue ◽  
Minoru Sasaki ◽  
Hiroshi Negishi ◽  
Guang-Cheng Xiong
Keyword(s):  
Thin Films ◽  
Perovskite Manganite ◽  
Carrier Generation ◽  
Polaron Effect ◽  
Recombination Processes

A study of trap and recombination centers in MAPbI3 perovskites

2016 ◽  
Vol 18 (48) ◽  
pp. 32862-32867 ◽  
Author(s):  
G. Gordillo ◽  
C. A. Otálora ◽  
A. A. Ramirez
Keyword(s):  
Thin Films ◽  
Measurement System ◽  
Influence Of Temperature ◽  
Transient Photoconductivity ◽  
Recombination Processes ◽  
Recombination Centers ◽  
Relaxation Curves ◽  
Theoretical Simulations ◽  
Photoconductivity Response

Trapping and recombination processes in thin films of CH3NH3PbI3 (MAPbI3) were studied by means of transient photoconductivity measurements and theoretical simulations of the relaxation curves resulting from the photocurrent measurements; in particular, the influence of temperature, as well as of the sample intensity of temperature illumination and pressure inside the measurement system on the photoconductivity response were studied.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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