n-Si/i-p-i SiGe/n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy

1999 ◽  
Vol 86 (3) ◽  
pp. 1463-1466 ◽  
Author(s):  
Jinshu Zhang ◽  
Xiaojun Jin ◽  
Hongyong Jia ◽  
Peiyi Chen ◽  
Pei-Hsin Tsien ◽  
...  
Keyword(s):  
Microwave Power ◽  
High Vacuum ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Ultra High Vacuum

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Emitter-ballasting-resistor-free SiGe microwave power heterojunction bipolar transistor

1999 ◽  
Vol 20 (7) ◽  
pp. 326-328 ◽  
Author(s):  
Jinshu Zhang ◽  
Hongyong Jia ◽  
Pei-Hsin Tsien ◽  
Tai-Chin Lo
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Design optimization of microwave power heterojunction bipolar transistor cells

2003 ◽  
Author(s):  
G.W. Wang ◽  
L.W. Yang ◽  
R.W. Laird ◽  
D.A. Williams ◽  
J.P. Sadowski ◽  
...  
Keyword(s):  
Design Optimization ◽  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Transistor Model Building for a Microwave Power Heterojunction Bipolar Transistor

2015 ◽  
Vol 16 (2) ◽  
pp. 85-92 ◽  
Author(s):  
Hai-Feng Wu ◽  
Qian-Fu Cheng ◽  
Shu-Xia Yan ◽  
Qi-Jun Zhang ◽  
Jian-Guo Ma
Keyword(s):  
Microwave Power ◽  
Model Building ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Transistor Model

Thin Pyrolytic Graphite Films for Electron Microscope Substrates

1971 ◽  
Vol 29 ◽  
pp. 226-227 ◽  
Author(s):  
George H. N. Riddle ◽  
Benjamin M. Siegel
Keyword(s):  
Vacuum Chamber ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Graphite Substrate ◽  
Nickel Substrate ◽  
Routine Procedure ◽  
Field Electron Microscopy ◽  
Dark Field Electron

A routine procedure for growing very thin graphite substrate films has been developed. The films are grown pyrolytically in an ultra-high vacuum chamber by exposing (111) epitaxial nickel films to carbon monoxide gas. The nickel serves as a catalyst for the disproportionation of CO through the reaction 2C0 → C + CO2. The nickel catalyst is prepared by evaporation onto artificial mica at 400°C and annealing for 1/2 hour at 600°C in vacuum. Exposure of the annealed nickel to 1 torr CO for 3 hours at 500°C results in the growth of very thin continuous graphite films. The graphite is stripped from its nickel substrate in acid and mounted on holey formvar support films for use as specimen substrates.The graphite films, self-supporting over formvar holes up to five microns in diameter, have been studied by bright and dark field electron microscopy, by electron diffraction, and have been shadowed to reveal their topography and thickness. The films consist of individual crystallites typically a micron across with their basal planes parallel to the surface but oriented in different, apparently random directions about the normal to the basal plane.

A High Voltage Electron Microscopy Study of Sub-Oxide Formation in Vanadium

1971 ◽  
Vol 29 ◽  
pp. 212-213
Author(s):  
R. H. Geiss ◽  
R. L. Ladd ◽  
K. R. Lawless
Keyword(s):  
High Vacuum ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Ultra High Vacuum ◽  
Pure Oxygen ◽  
Pressure Oxidation ◽  
High Voltage Electron Microscopy ◽  
Oxidation Study ◽  
Voltage Electron ◽  
Good Agreement

Detailed electron microscope and diffraction studies of the sub-oxides of vanadium have been reported by Cambini and co-workers, and an oxidation study, possibly complicated by carbon and/or nitrogen, has been published by Edington and Smallman. The results reported by these different authors are not in good agreement. For this study, high purity polycrystalline vanadium samples were electrochemically thinned in a dual jet polisher using a solution of 20% H2SO4, 80% CH3OH, and then oxidized in an ion-pumped ultra-high vacuum reactor system using spectroscopically pure oxygen. Samples were oxidized at 350°C and 100μ oxygen pressure for periods of 30,60,90 and 160 minutes. Since our primary interest is in the mechanism of the low pressure oxidation process, the oxidized samples were cooled rapidly and not homogenized. The specimens were then examined in the HVEM at voltages up to 500 kV, the higher voltages being necessary to examine thick sections for which the oxidation behavior was more characteristic of the bulk.

Sign in / Sign up

Export Citation Format

Share Document