Effects of film thickness and lattice mismatch on strain states and magnetic properties of La0.8Ca0.2MnO3 thin films

1999 ◽  
Vol 85 (8) ◽  
pp. 4794-4796 ◽  
Author(s):  
R. A. Rao ◽  
D. Lavric ◽  
T. K. Nath ◽  
C. B. Eom ◽  
L. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Lattice Mismatch

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

Influence of film thickness and strain on magnetic properties of epitaxial La0.7A0.3CoO3 (A = Ca, Sr, Ba) thin films

2004 ◽  
Vol 13 (12) ◽  
pp. 74-75 ◽  
Author(s):  
O. Morán ◽  
D. Fuchs ◽  
P. Adelmann ◽  
R. Schneider
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness

Variation of microwave magnetic properties for thin films of ferromagnetic metals with the film thickness

2018 ◽  
Vol 459 ◽  
pp. 20-25
Author(s):  
Stanislav Y. Bobrovskii ◽  
Igor T. Iakubov ◽  
Andrei N. Lagarkov ◽  
Sergei A. Maklakov ◽  
Sergei S. Maklakov ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Ferromagnetic Metals

Growth of heteroepitaxial GaSb thin films on Si(100) substrates

2004 ◽  
Vol 19 (8) ◽  
pp. 2315-2321 ◽  
Author(s):  
Thang Nguyen ◽  
Walter Varhue ◽  
Edward Adams ◽  
Mark Lavoie ◽  
Stephen Mongeon
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Lattice Mismatch ◽  
Stacking Faults ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Radio Frequency Sputtering ◽  
Atomic Force ◽  
Transmission Electron

The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.

EFFECTS OF IN-PLANE STRAIN ON MAGNETISM IN LaMnO3 THIN FILMS

2002 ◽  
Vol 16 (20n22) ◽  
pp. 3281-3284 ◽  
Author(s):  
K. H. AHN ◽  
A. J. MILLIS
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Plane Strain ◽  
Elastic Energy ◽  
Ground State ◽  
Lattice Mismatch ◽  
Tight Binding ◽  
Antiferromagnetic State ◽  
Magnetic Ground State ◽  
Lattice Coupling

The effects of the in-plane strain on the magnetic properties of LaMnO3 thin films are calculated using an elastic energy expression and a tight binding Hamiltonian with electron-lattice coupling. Tensile uniaxial strain of the order of 2%, which is the order of the magnitude of those induced in thin films by lattice mismatch with substrates, is found to change the magnetic ground state from A-type antiferromagnetic state to purely antiferromagnetic state.

Strain-tunable magnetic properties of epitaxial lithium ferrite thin film on MgAl2O4 substrates

2015 ◽  
Vol 3 (21) ◽  
pp. 5598-5602 ◽  
Author(s):  
Ruyi Zhang ◽  
Ming Liu ◽  
Lu Lu ◽  
Shao-Bo Mi ◽  
Hong Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Pressure ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Lithium Ferrite ◽  
Interface Engineering ◽  
System P ◽  
Sputtering System

Interface engineering by controlling the film thickness is an effective method to tune/control the magnetic properties of epitaxial LiFe5O8 thin films fabricated by a high-pressure sputtering system.

ELECTRONIC STRUCTURES AND REORIENTATION OF PERPENDICULAR MAGNETIC ANISOTROPY OF Co/Au(111) and Co/Pd(111)

2002 ◽  
Vol 09 (02) ◽  
pp. 865-869
Author(s):  
M. SAWADA ◽  
K. HAYASHI ◽  
A. KAKIZAKI
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Binding Energy ◽  
Film Thickness ◽  
Magnetic Anisotropy ◽  
Photoelectron Spectroscopy ◽  
Electronic Structures ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetization Direction ◽  
Electronic And Magnetic Properties

We have investigated electronic and magnetic properties of Co thin films epitaxially grown on Au(111) and Pd(111) substrates by spin- and angle-resolved photoelectron spectroscopy. In the Co/Au(111) system, the magnetization direction of Co changes from perpendicular to parallel to the surface at about 6 ML. The origin of the reorientation is qualitatively explained by the increasing contribution of Co 3d orbitals perpendicular to the surface. In the Co/Pd(111) system, the reorientation of the magnetization direction occurs at about 4 ML, the origin of which is explained as being due to the contribution of the upper Λ3 band of Co with increase of film thickness as in the case of the Co/Au(111) system. The stronger hybridization between Co 3d and Pd 4d states in the Co/Pd(111) system causes larger binding energy shifts of the Λ3 states than in the Co/Au(111) system.

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