A study on the capacitance–voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications

1999 ◽  
Vol 85 (8) ◽  
pp. 4087-4090 ◽  
Author(s):  
Benjamin Chih-ming Lai ◽  
Nan-hui Kung ◽  
Joseph Ya-min Lee
Keyword(s):  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Very Large Scale Integration ◽  
Oxide Semiconductor ◽  
Capacitance Voltage ◽  
Large Scale Integration ◽  
Scale Integration

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects

Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based onP-/P-Thin-Film Epitaxial Silicon Wafers

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2565-2570 ◽  
Author(s):  
Hirofumi Shimizu ◽  
Yuji Sugino ◽  
Norio Suzuki ◽  
Shogo Kiyota ◽  
Koichi Nagasawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon Wafers ◽  
Oxide Semiconductor ◽  
Epitaxial Silicon ◽  
Gate Oxide Integrity

Behavior Models of Voltage Differencing Inverting Buffered Amplifier and Applications in Circuit Analysis

2019 ◽  
Vol 12 (4) ◽  
pp. 298-303
Author(s):  
YongAn LI
Keyword(s):  
Large Scale ◽  
Vlsi Design ◽  
Circuit Analysis ◽  
Second Order ◽  
Very Large Scale Integration ◽  
Behavioral Models ◽  
Order Filter ◽  
Large Scale Integration ◽  
Scale Integration ◽  
Behavior Models

Background: The symbolic nodal analysis acts as a pivotal part of the very large scale integration (VLSI) design. Methods: In this work, based on the terminal relations for the pathological elements and the voltage differencing inverting buffered amplifier (VDIBA), twelve alternative pathological models for the VDIBA are presented. Moreover, the proposed models are applied to the VDIBA-based second-order filter and oscillator so as to simplify the circuit analysis. Results: The result shows that the behavioral models for the VDIBA are systematic, effective and powerful in the symbolic nodal circuit analysis.</P>

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