Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application

2012 ◽  
Vol 111 (8) ◽  
pp. 084501 ◽  
Author(s):  
Pinggang Peng ◽  
Dan Xie ◽  
Yi Yang ◽  
Yongyuan Zang ◽  
Xili Gao ◽  
...  
2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.


2001 ◽  
Vol 73 (5) ◽  
pp. 531-534 ◽  
Author(s):  
H. Minami ◽  
D. Manage ◽  
Y.Y. Tsui ◽  
R. Fedosejevs ◽  
M. Malac ◽  
...  

2001 ◽  
Vol 10 (3-7) ◽  
pp. 900-904 ◽  
Author(s):  
Kenji Ebihara ◽  
Toshiyuki Nakamiya ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Shin-ichi Aoqui

2006 ◽  
Vol 252 (13) ◽  
pp. 4667-4671 ◽  
Author(s):  
Nikoletta Jegenyes ◽  
Zsolt Toth ◽  
Bela Hopp ◽  
Jozsef Klebniczki ◽  
Zsolt Bor ◽  
...  

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