Spectra of Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in GaAs/AlGaAs quantum wells and their behaviors under external strain

2012 ◽  
Vol 100 (15) ◽  
pp. 152110 ◽  
Author(s):  
J. L. Yu ◽  
Y. H. Chen ◽  
Y. Liu ◽  
C. Y. Jiang ◽  
H. Ma ◽  
...  
2017 ◽  
Vol 95 (3) ◽  
Author(s):  
Jun Li ◽  
Wen Yang ◽  
Jiang-Tao Liu ◽  
Wei Huang ◽  
Cheng Li ◽  
...  

2001 ◽  
Vol 690 ◽  
Author(s):  
Sergey D. Ganichev ◽  
Franz-Peter Kalz ◽  
Ulrich Rössler ◽  
Wilhelm Prettl ◽  
Eugenius L. Ivchenko ◽  
...  

ABSTRACTThe photogalvanic effects, which require a system lacking inversion symmetry, become possible in SiGe based quantum well (QW) structures due to their built-in asymmetry. We report on observations of the circular and linear photogalvanic effects induced by infrared radiation in (001)-and (113)-orientedp–Si/Si1–xGex QW structures and analyse these observations in view of the possible symmetry of these structures. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs with band splitting in k-space which results in a directed motion of free carriers in the plane of the QW. We discuss possible mechanisms that give rise to spin-splitting of the electronic subband states for different symmetries.


2003 ◽  
Vol 68 (3) ◽  
Author(s):  
S. D. Ganichev ◽  
V. V. Bel’kov ◽  
Petra Schneider ◽  
E. L. Ivchenko ◽  
S. A. Tarasenko ◽  
...  

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