Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application

2012 ◽  
Vol 100 (14) ◽  
pp. 143901 ◽  
Author(s):  
Hyunju Lee ◽  
Tomihisa Tachibana ◽  
Norihiro Ikeno ◽  
Hiroki Hashiguchi ◽  
Koji Arafune ◽  
...  
2014 ◽  
Vol 492 ◽  
pp. 341-345
Author(s):  
Soumyadeep Sinha ◽  
Shaibal K. Sarkar

Zinc Oxide (ZnO) films were deposited by Atomic Layer Deposition (ALD) using Diethylzinc and a combination of Water and Ozone as the precursores. Electrical conductivity of ALD grown ZnO films, under low field, were studied with varied partial pressure of the constituent reactants. Supressing the oxygen vacancy by introducing O3 during the reaction increase the resistivity of the films by couple of orders of magnitude. UV-Vis spectroscopy measurement showed the films to be transparent giving a room for its application as a TCO in solar cell.


Author(s):  
А.С. Гудовских ◽  
Д.А. Кудряшов ◽  
А.И. Баранов ◽  
А.В. Уваров ◽  
И.А. Морозов

For the first time, the possibility of forming boron phosphide layers by plasma-enhanced atomic-layer deposition at a temperature of 250 ° C has been shown. Also the possibility of their use as a selective hole contact to silicon for solar cell application has been experimentally demonstrated.


2018 ◽  
Author(s):  
Pei-Ying Lin ◽  
Ming-Hsien Li ◽  
Yu-Hsien Chiang ◽  
Po-Shen Shen ◽  
Peter Chen

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  

2020 ◽  
Vol 12 (2) ◽  
pp. 02037-1-02037-6
Author(s):  
Ranjitha R. ◽  
◽  
T. K. Subramanyam ◽  
S. Pavan kumar ◽  
Nagesh M ◽  
...  

2020 ◽  
Vol 46 (6) ◽  
pp. 7122-7130
Author(s):  
Bo-Wei Shih ◽  
Wen-Pin Hsieh ◽  
Jing-Jong Shyue ◽  
Feng-Yu Tsai

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