Wide-band and intensity-related spectral analysis of Cygnus X-1 with Suzaku

2012 ◽  
Author(s):  
Shin'ya Yamada
Keyword(s):  
Spectral Analysis ◽  
Wide Band

scholarly journals Revisiting the X-ray emission of the asynchronous polar V1432 Aql

2022 ◽  
Vol 21 (12) ◽  
pp. 315
Author(s):  
Qi-Shan Wang ◽  
Sheng-Bang Qian ◽  
Li-Ying Zhu
Keyword(s):  
Magnetic Field ◽  
Spectral Analysis ◽  
Accretion Rate ◽  
Wide Band ◽  
Reflection Effect ◽  
X Ray ◽  
Low Intensity ◽  
Strong Reflection ◽  
Orbital Modulation ◽  
The Magnetic Field

Abstract As the only eclipsing asynchronous polar, V1432 Aql provides an excellent laboratory to study the interaction between the accreted matter and the magnetic field. Here, we report an analysis of the X-ray data from the contemporaneous NuSTAR and Swift-XRT observations. The X-ray data present a profile with a low-intensity state for almost half an orbital period, a dip at 0.6 phase, and a peak at 0.75 phase, which suggests that there was only one accretion region during the observation and the claim is supported by the spectral analysis. The comparison with the previous data indicates that the X-ray data have an orbital modulation, as the case in BeppoSAX, rather than a spin one observed in ROSAT. We attribute the orbit and spin modulations to the different accretion geometries at work. The spectral analysis of the wide-band data presents a significant reflection effect, a commonly observed soft X-ray temperature, and the energy balance in V1432 Aql. Additionally, we obtained a low total accretion rate of 1.3 × 10−10 M ⊙ yr−1 and a high specific accretion rate of 3.8 g cm−2 s−1 which explains the strong reflection from the surface of the white dwarf. However, due to its complex emission, a more physical understanding of its accretion geometry is still outstanding.

Wide-band spectral analysis of blood pressure and RR interval variability in borderline and mild hypertension

1999 ◽  
Vol 19 (6) ◽  
pp. 490-496 ◽  
Author(s):  
Reijo Takalo ◽  
Ilkka Korhonen ◽  
Heli Sorsa ◽  
Silja Majahalme ◽  
Martti Tuomisto ◽  
...  
Keyword(s):  
Blood Pressure ◽  
Spectral Analysis ◽  
Mild Hypertension ◽  
Wide Band ◽  
Rr Interval

Seven-colour photometry at the Geneva Observatory

1966 ◽  
Vol 24 ◽  
pp. 262-266 ◽  
Author(s):  
M. Golay
Keyword(s):  
Wide Band ◽  
Electric System ◽  
Band Type

During the last 5 years, we have developed a seven-colour photometry at the Geneva Observatory. Our multicolour photo-electric system is of a wide-band type; the bandwidth being about 500Å for four filters. The three others are similar to theUBVsystem. In Table 1 we give the filter combinations used in our photometry (1).

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Sign in / Sign up

Export Citation Format

Share Document