Effects of thermal annealing on photoluminescence and structural properties of (ZnSe)2(CdSe)n short-period-superlattices multiple quantum wells

1999 ◽  
Vol 85 (4) ◽  
pp. 2398-2401 ◽  
Author(s):  
R. C. Tu ◽  
Y. K. Su ◽  
S. T. Chou
Keyword(s):  
Quantum Wells ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Short Period ◽  
Short Period Superlattices

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

Thermal annealing recovery of intersubband transitions in proton-irradiated GaAs/AlGaAs multiple quantum wells

2000 ◽  
Vol 77 (18) ◽  
pp. 2867-2869 ◽  
Author(s):  
F. Hegeler ◽  
M. O. Manasreh ◽  
C. Morath ◽  
P. Ballet ◽  
H. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions

Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells

Nanoscale ◽  
2016 ◽  
Vol 8 (11) ◽  
pp. 6043-6056 ◽  
Author(s):  
Hailiang Dong ◽  
Jing Sun ◽  
Shufang Ma ◽  
Jian Liang ◽  
Taiping Lu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Structural Properties ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Influence Of Substrate

Effects of electron irradiation on photoluminescence from GaInNAs/GaAs multiple quantum wells subject to thermal annealing

2004 ◽  
Vol 151 (5) ◽  
pp. 290-292
Author(s):  
E.-M. Pavelescu ◽  
M. Pessa ◽  
N. Baltateanu ◽  
A. Gheorghiu ◽  
T. Jouhti ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Electron Irradiation ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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