He-implantation induced defects in Si studied by slow positron annihilation spectroscopy
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2004 ◽
Vol 42
(13)
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pp. 2441-2459
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2010 ◽
Vol 11
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1995 ◽
Vol 196-201
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2001 ◽
Vol 155
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pp. 139-144
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Vol 376
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2010 ◽
Vol 85
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