Gradual channel approximation models for organic field-effect transistors: The space-charge field effect

2012 ◽  
Vol 111 (5) ◽  
pp. 054506 ◽  
Author(s):  
Martin Weis
Keyword(s):  
Space Charge ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Space Charge Field ◽  
Organic Field Effect Transistors ◽  
Channel Approximation ◽  
Charge Field ◽  
Approximation Models

Tuning the Threshold Voltage in Organic Field Effect Transistors by Space Charge Polarization of Gate Dielectrics

2009 ◽  
Vol 1154 ◽  
Author(s):  
Heisuke Sakai ◽  
Koudai Konno ◽  
Hideyuki Murata
Keyword(s):  
Space Charge ◽  
Active Layer ◽  
Threshold Voltage ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Space Charge Polarization ◽  
Chemical Doping ◽  
Organic Field Effect Transistors ◽  
Charge Polarization

AbstractStudies of gate dielectrics in organic field effect transistors (OFETs) have been attractive because the electric properties of OFETs are susceptibly affected by the choice of the gate dielectrics. Here, we demonstrate a tunable threshold voltage in an organic field effect transistor (OFET) using an ion-dispersed gate dielectrics. By applying external electric field (Vex) to the gate dielectrics, the dispersed ions in the gate dielectrics are separated by electrophoresis and form space charge polarization. The drain current of the OFET increased over 1.9 times and the threshold voltage (Vth) decreased 22 V (from -35.1 V to -13.1 V).The shift direction of Vth was easily tuned by the polarity of the external voltage. The dielectric permittivity of the gate dielectrics and mobility of the active layer were unchanged after the polarization of the gate dielectrics. The UV-VIS differential absorption spectra of the OFETs indicate that there is no chemical doping in the active layer of the OFETs. These results indicated the shifts of threshold voltages were originated from the polarization of gate dielectrics.

scholarly journals Kombination von galvanomagnetischen- und Feldeffekt-Messungen an Germanium-Bikristallen

1965 ◽  
Vol 20 (12) ◽  
pp. 1599-1611
Author(s):  
G. Landwehr
Keyword(s):  
Space Charge ◽  
Field Effect ◽  
Reverse Bias ◽  
Hole Density ◽  
Reverse Bias Voltage ◽  
Space Charge Field ◽  
Boundary Field ◽  
Small Width ◽  
Charge Field ◽  
P Type

The transport properties in a magnetic field of the p-type space charge region adjacent to 20° tilt grain boundaries in n-type germanium bicrystals were investigated as a function of a reverse bias voltage between bulk and grain boundary (field effect). The average HALL mobility at 77°K of the holes decreased with increasing bias, demonstrating the existence of a size effect caused by diffuse boundary scattering in connection with the small width of the space charge layer. The results obtained for symmetrical bias are in agreement with a simplified theory based on a constant space charge field and allow to estimate an average hole density. The transverse magnetoresistance also decreased with increasing field effect-voltage, as expected.

Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping

2009 ◽  
Vol 16 (3) ◽  
pp. 269-273 ◽  
Author(s):  
Yoshiaki Sugimoto ◽  
Nobuhiro Tsumori ◽  
Shintaro Nomura ◽  
Toshiharu Saiki
Keyword(s):  
Quantum Dot ◽  
Space Charge ◽  
Field Effect ◽  
Near Field ◽  
Space Charge Field ◽  
Charge Field ◽  
Gaas Quantum Dot
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