Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6

1998 ◽  
Vol 84 (11) ◽  
pp. 6372-6381 ◽  
Author(s):  
H. Kim ◽  
N. Taylor ◽  
T. R. Bramblett ◽  
J. E. Greene
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Kinetics Of

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

1998 ◽  
Vol 183 (4) ◽  
pp. 581-593 ◽  
Author(s):  
R.S. Kern ◽  
S. Tanaka ◽  
L.B. Rowland ◽  
R.F. Davis
Keyword(s):  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Reaction Kinetics ◽  
Molecular Beam ◽  
Gas Source ◽  
Kinetics Of

Growth kinetics of GaN grown by gas-source molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 89-93 ◽  
Author(s):  
J.R. Jenny ◽  
R. Kaspi ◽  
K.R. Evans
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Gas Source ◽  
Kinetics Of

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Kinetics ◽  
Molecular Beam ◽  
Kinetics Of
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