Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

1998 ◽  
Vol 84 (2) ◽  
pp. 870-876 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
M. Shin ◽  
M. Skowronski ◽  
...  
1998 ◽  
Vol 535 ◽  
Author(s):  
X. B. Zhang ◽  
S. K. Hark

AbstractZincblende ZnxCdl−xSe alloys were grown on (001) InP by organometallic vapor phase epitaxy (OMVPE) using various VI / H precursor flow ratios, ranging from 0.95 to 12, at a temperature of 420°C. Spatial distribution of luminescent centers in the epilayer was characterized by cathodoluminescence (CL) spectroscopy and imaging. Both near band-gap (NBE) and deep level (DLE) emissions were observed in the spectra, with the width of the NBE peak increases with the VI / II flow ratio. Monochromatic CL images showed that the broadening of the NBE peak has its origin in the spatial inhomogeneity of the luminescent centers of the epilayer. Extended defects responsible for the DLE was only found in pyramidal hillocks seen in the CL images. The density of these defects was found to increase with the VI / I1 flow ratio.


1995 ◽  
Vol 67 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
W. I. Lee ◽  
T. C. Huang ◽  
J. D. Guo ◽  
M. S. Feng

2013 ◽  
Vol 52 (11R) ◽  
pp. 110201 ◽  
Author(s):  
Alexander Vodopyanov ◽  
Yurii Buzynin ◽  
Dmitry Mansfeld ◽  
Oleg Khrykin ◽  
Yurii Drozdov ◽  
...  

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