Thermal resistance reduction in high power superluminescent diodes by using active multi-mode interferometer

2012 ◽  
Vol 100 (3) ◽  
pp. 031108 ◽  
Author(s):  
Zhigang Zang ◽  
Keisuke Mukai ◽  
Paolo Navaretti ◽  
Marcus Duelk ◽  
Christian Velez ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
High Power ◽  
Resistance Reduction ◽  
Superluminescent Diodes ◽  
Multi Mode

1.0^|^mu;m High-power and Broad Spectral Bandwidth Superluminescent Diodes

2013 ◽  
Vol 133 (8) ◽  
pp. 1437-1442
Author(s):  
Tsuyoshi Ohgoh ◽  
Atsushi Mukai ◽  
Junya Yaguchi ◽  
Hideki Asano
Keyword(s):  
High Power ◽  
Spectral Bandwidth ◽  
Superluminescent Diodes

High Power and Stable High Coupling Efficiency (66%) Superluminescent Light Emitting Diodes by Using Active Multi-Mode Interferometer

2011 ◽  
Vol E94-C (5) ◽  
pp. 862-864 ◽  
Author(s):  
Zhigang ZANG ◽  
Keisuke MUKAI ◽  
Paolo NAVARETTI ◽  
Marcus DUELK ◽  
Christian VELEZ ◽  
...  
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Coupling Efficiency ◽  
Light Emitting ◽  
Multi Mode

scholarly journals High power GaN-based blue superluminescent diodes with low spectral modulation

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045202
Author(s):  
Wei Xiong ◽  
Lei Hu ◽  
Jianping Liu ◽  
Lingrong Jiang ◽  
Aiqin Tian ◽  
...  
Keyword(s):  
High Power ◽  
Spectral Modulation ◽  
Superluminescent Diodes

High-Power and Broadband Quantum Dot Superluminescent Diodes Centered at 1250 nm for Optical Coherence Tomography

2007 ◽  
Vol 13 (5) ◽  
pp. 1267-1272 ◽  
Author(s):  
Sumon K. Ray ◽  
Tin Lun Choi ◽  
Kristian M. Groom ◽  
Benjamin J. Stevens ◽  
Huiyun Liu ◽  
...  
Keyword(s):  
Optical Coherence Tomography ◽  
Quantum Dot ◽  
High Power ◽  
Optical Coherence ◽  
Superluminescent Diodes

Single-transverse-mode active multi-mode- interferometer 1.45 μm high power laser diode

2001 ◽  
Vol 73 (5-6) ◽  
pp. 571-574 ◽  
Author(s):  
K. Hamamoto ◽  
E. Gini ◽  
C. Holtmann ◽  
H. Melchior
Keyword(s):  
Laser Diode ◽  
High Power ◽  
Transverse Mode ◽  
High Power Laser ◽  
Power Laser ◽  
Multi Mode ◽  
High Power Laser Diode

Improved Heat Dissipation and Optical Performance of High-power LED Packaging with Sintered Nanosilver Die-attach Material

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001585-001605 ◽  
Author(s):  
Paul Panaccione ◽  
Tao Wang ◽  
Guo-Quan Lu ◽  
Xu Chen ◽  
Susan Luo
Keyword(s):  
Thermal Resistance ◽  
High Power ◽  
Heat Removal ◽  
High Current ◽  
Die Attach ◽  
High Power Led ◽  
Silver Epoxy ◽  
The Difference ◽  
Nanosilver Paste ◽  
The Impact

Heat removal in packaged high-power light-emitting diode (LED) chips is critical to device performance and reliability. Thermal performance of LEDs is important in that lowered junction temperatures extend the LED's lifetime at a given photometric flux (brightness). Optionally, lower thermal resistance can enable increased brightness operation without exceeding the maximum allowable Tj for a given lifetime. A significant portion of the junction-to-case thermal resistance comes from the joint between chip and substrate, or the die-attach layer. In this study, we evaluated three different types of leading die-attach materials; silver epoxy, lead-free solder, and an emerging nanosilver paste. Each of the three was processed via their respective physical and chemical mechanisms: epoxy curing by cross-linking of polymer molecules; intermetalic soldering by reflow and solidification; and nanosilver sintering by solid-state atomic diffusion. High-power LED chips with a chip area of 3.9 mm2 were attached by the three types of materials onto metalized aluminum nitride substrates, wire-bonded, and then tested in an electro-optical setup. The junction-to-heatsink thermal resistance of each LED assembly was determined by the wavelength shift methodology, described in detail in this paper. We found that the average thermal resistance in the chips attached by the nanosilver paste was the lowest, and it is the highest from the chips attached by the silver epoxy: the difference between the two was about 0.7°C/W, while the difference between the sintered and soldered was about 0.3°C/W. The lower thermal resistance in the sintered joints is expected to significantly improve the photometric flux from the device. Simple calculations, excluding high current efficiency droop, predict that the brightness improvement could be as high as 50% for the 3.9 mm2 chip. The samples will be functionally tested at high current, in both steady-state and pulsed operation, to determine brightness improvements, including the impact of droop. Nanosilver die-attach on a range of chip sizes up to 12 mm2 are also considered and discussed.

Depolarization in high power Faraday isolators with single mode and multi-mode laser incidences

2010 ◽  
Vol 22 (6) ◽  
pp. 1229-1233
Author(s):  
葛廷武 Ge Tingwu ◽  
陆丹 Lu Dan ◽  
伍剑 Wu Jian ◽  
徐坤 Xu Kun ◽  
林金桐 Lin Jintong
Keyword(s):  
High Power ◽  
Single Mode ◽  
Mode Laser ◽  
Multi Mode

Experimental Study of Thermal Resistance Measurement for High Power Laser Diode Array

2010 ◽  
Vol 47 (11) ◽  
pp. 112501
Author(s):  
辛国锋 Xin Guofeng ◽  
沈力 Shen Li ◽  
皮浩洋 Pi Haoyang ◽  
瞿荣辉 Qu Ronghui ◽  
蔡海文 Cai Haiwen ◽  
...  
Keyword(s):  
Experimental Study ◽  
Thermal Resistance ◽  
Laser Diode ◽  
High Power ◽  
Resistance Measurement ◽  
Diode Array ◽  
High Power Laser ◽  
Power Laser ◽  
Laser Diode Array ◽  
High Power Laser Diode
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