Control of in-plane uniaxial anisotropy of Fe72Si14B14 magnetostrictive thin film using a thermal expansion coefficient

2012 ◽  
Vol 111 (7) ◽  
pp. 07E511 ◽  
Author(s):  
Jaewon Shin ◽  
Sung Hoon Kim ◽  
Yasuaki Suwa ◽  
Shuichiro Hashi ◽  
Kazushi Ishiyama
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Uniaxial Anisotropy

Measurement of thermal expansion coefficient of substrate GGG and its epitaxial layer YIG

1999 ◽  
Vol 14 (1) ◽  
pp. 2-4 ◽  
Author(s):  
Rui-sheng Liang ◽  
Feng-chao Liu
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Single Crystal ◽  
Thermal Expansion Coefficient ◽  
Epitaxial Layer ◽  
Expansion Coefficient ◽  
Linear Thermal Expansion ◽  
New Method ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

A new method is used in measuring the linear thermal expansion coefficients in composite consisting of a substrate Gd3Ga2Ga3O12 (GGG) and its epitaxial layer Y3Fe2Fe3O12 (YIG) within the temperature range 13.88 °C–32.50 °C. The results show that the thermal expansion coefficient of GGG in composite is larger than that of the GGG in single crystal; the thermal expansion coefficient of thick film YIG is also larger than that of thin film. The results also show that the thermal expansion coefficient of a composite consisting of film and its substrate can be measured by using a new method.

Temperature Dependence of Biaxial Modulus and Thermal Expansion Coefficient of Thin Films Using Wafer Curvature Method

2003 ◽  
Vol 795 ◽  
Author(s):  
M. Capanu ◽  
A. Cervin-Lawry ◽  
A. Patel ◽  
I. Koutsaroff ◽  
P. Woo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Expansion ◽  
Film Thickness ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Stress Measurement ◽  
Fused Silica ◽  
Wafer Curvature ◽  
Disk Method

ABSTRACTThe present work uses wafer curvature (disk) method to measure the temperature variation of the biaxial modulus and the thermal expansion coefficient TEC from 25°C to 205°C. The following thin films were measured: PolySi, low stress LPCVD SixNy and (Ba0.7, Sr0.3)TiO3 (BST). To improve the precision, perfect circular thin wafers were used: 4 inches circular 280μm thick <111>Si and 450μm thick Fused Silica. The measurements were performed using a commercial Tencor FLX2320 Stress Measurement System. The film thickness was measured with Tencor TF1 thin film optical system.

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

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