Sensitivity enhancement of a giant magnetoresistance alternating spin-valve sensor for high-field applications

2012 ◽  
Vol 111 (7) ◽  
pp. 07E504 ◽  
Author(s):  
Seungha Yoon ◽  
Youngman Jang ◽  
Chunghee Nam ◽  
Seungkyo Lee ◽  
Joonhyun Kwon ◽  
...  
Keyword(s):  
High Field ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Sensitivity Enhancement

Which spin valve for next giant magnetoresistance head generation? (invited)

2000 ◽  
Vol 87 (9) ◽  
pp. 5377-5382 ◽  
Author(s):  
Satoru Araki ◽  
Masashi Sano ◽  
Shuxiang Li ◽  
Yoshihiro Tsuchiya ◽  
Olivier Redon ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

Time Dependent Magnetic Switching in Spin Valve Structures

1995 ◽  
Vol 384 ◽  
Author(s):  
J. B. Restorff ◽  
M. Wun-Fogle ◽  
S. F. Cheng ◽  
K. B. Hathaway
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Time History ◽  
Time Dependent ◽  
Si Substrates ◽  
Magnetic Switching ◽  
Magnetic Aftereffect ◽  
Magnetron Sputter Deposition ◽  
History Of ◽  
Time Required

ABSTRACTWe have observed time dependent magnetic switching in spin-valve sandwich structures of Cu/Co/Cu/Fe films grown on silicon and Kapton substrates and Permalloy/Co/Cu/Co films grown on NiO or NiO/CoO coated Si substrates. The giant magnetoresistance (MR) values ranged from 1 to 3 percent at room temperature. The films were grown by DC magnetron sputter deposition. Measurements were made on the time required for the MR to stabilize to about 1 part in 104 after the applied field was incremented. This time depends almost linearly on the amplitude of the timedependent MR change with a slope (time / ΔMR) of 20 000 to 30 000 s. Some samples took as long as 70 s to stabilize. The time dependent effects may be important for devices operating in these regions of the magnetoresistance curve. In addition, measurements were made on the time history of the MR value for a period of 75 s following a step change in the field from saturation. We observed that the time dependent behavior of the MR values of both experiments produced an excellent fit to a function of the form ΔMR(t) = α + β;ln(t) where ɑ and β are constants. This time dependence was consistent with the behavior of the magnetic aftereffect.

Giant magnetoresistance in 60–150-nm-wide pseudo-spin-valve nanowires

2002 ◽  
Vol 81 (15) ◽  
pp. 2809-2811 ◽  
Author(s):  
F. J. Castaño ◽  
S. Haratani ◽  
Y. Hao ◽  
C. A. Ross ◽  
Henry I. Smith
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve

Reduction of AMR effect in giant magnetoresistance spin valve structures

2001 ◽  
Vol 37 (4) ◽  
pp. 1733-1735 ◽  
Author(s):  
M. Li ◽  
S.-H. Liao ◽  
C. Horng ◽  
Y. Zheng ◽  
R.Y. Tong ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve

Dependence of giant magnetoresistance on the thickness of magnetic and non-magnetic layers in spin-valve sandwiches

2000 ◽  
Vol 272 (4) ◽  
pp. 282-288 ◽  
Author(s):  
Ming Xu ◽  
Yong Fan ◽  
Guangming Luo ◽  
Zhenhong Mai
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Magnetic Layers

Giant magnetoresistance in ion beam deposited spin-valve films with specular enhancement

2001 ◽  
Vol 89 (11) ◽  
pp. 6931-6933 ◽  
Author(s):  
S. Sant ◽  
M. Mao ◽  
J. Kools ◽  
K. Koi ◽  
H. Iwasaki ◽  
...  
Keyword(s):  
Giant Magnetoresistance ◽  
Ion Beam ◽  
Spin Valve
Sign in / Sign up

Export Citation Format

Share Document