Hall effect and magnetic properties of III–V based (Ga1−xMnx)As/AlAs magnetic semiconductor superlattices

1998 ◽  
Vol 83 (11) ◽  
pp. 6551-6553 ◽  
Author(s):  
T. Hayashi ◽  
M. Tanaka ◽  
K. Seto ◽  
T. Nishinaga ◽  
H. Shimada ◽  
...  
2008 ◽  
Vol 10 (11) ◽  
pp. 115002 ◽  
Author(s):  
Yoon Shon ◽  
Sejoon Lee ◽  
D Y Kim ◽  
T W Kang ◽  
Chong S Yoon ◽  
...  

1995 ◽  
Vol 10 (4) ◽  
pp. 463-468 ◽  
Author(s):  
V A Kulbachinskii ◽  
P D Maryanchuk ◽  
I A Churilov ◽  
M Inoue ◽  
M Sasaki ◽  
...  

2017 ◽  
Vol 254 ◽  
pp. 48-51 ◽  
Author(s):  
K.K. Meng ◽  
J. Miao ◽  
X.G. Xu ◽  
Y. Wu ◽  
J.H. Zhao ◽  
...  

1989 ◽  
Vol 151 ◽  
Author(s):  
H. J. M. Swagten ◽  
S. J. E. A. Eltink ◽  
W. J. M. De Jonge

ABSTRACTIn this paper experimental evidence is presented for the carrier concentration dependence of the magnetic properties of Sn0.97Mn0.03Te, yielding a critical concentration above which ferromagnetic interactions are dominant. The observed behavior can be fairly well explained within a modified RKKY-model. Preliminary experiments on the low temperature magnetic phases indicate re-entrant spinglass behavior, which is qualitatively described with the spinglass model of Sherrington and Kirkpatrick.


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