Fully programmable single-photon detection module for InGaAs/InP single-photon avalanche diodes with clean and sub-nanosecond gating transitions

2012 ◽  
Vol 83 (1) ◽  
pp. 013104 ◽  
Author(s):  
Alberto Tosi ◽  
Adriano Della Frera ◽  
Andrea Bahgat Shehata ◽  
Carmelo Scarcella
Keyword(s):  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Quenching Circuit of Avalanche Diodes for Single Photon Detection

2013 ◽  
Vol 437 ◽  
pp. 1073-1076
Author(s):  
Qing Yao Xu ◽  
Hong Pei Wang ◽  
Xiang Chao Hu ◽  
Hai Qian ◽  
Ying Cheng Peng ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Single Photon Detection ◽  
Dark Count ◽  
Photon Detection ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Free Running ◽  
Single Photon Avalanche Diodes ◽  
Running Mode

To reduce the afterpulsing in single photon detection based on avalanche diodes, an advanced passive quenching circuit for operation in free-running mode is developed. The measurement setup is designed. The dark count rate (DCR) and afterpulsing of Single photon avalanche diodes (SPADs) are measured. The results show that the new passive quenching circuit has a better afterpulsing performance compared to traditional circuits.

scholarly journals Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Sensors ◽  
2020 ◽  
Vol 20 (2) ◽  
pp. 436 ◽  
Author(s):  
Chin-An Hsieh ◽  
Chia-Ming Tsai ◽  
Bing-Yue Tsui ◽  
Bo-Jen Hsiao ◽  
Sheng-Di Lin
Keyword(s):  
Detection Probability ◽  
Single Photon ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Single Photons ◽  
Photon Detection ◽  
Important Indicator ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes

Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.

Modeling photon detection efficiency and temporal response of single photon avalanche diodes

2009 ◽  
Author(s):  
Angelo Gulinatti ◽  
Ivan Rech ◽  
Silvia Fumagalli ◽  
Mattia Assanelli ◽  
Massimo Ghioni ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Temporal Response ◽  
Photon Detection ◽  
Avalanche Diodes ◽  
Photon Detection Efficiency ◽  
Single Photon Avalanche Diodes

Influence of Defects in 4H-SiC Avalanche Photodiodes on Geiger-Mode Dark Count Probability

2009 ◽  
Vol 615-617 ◽  
pp. 877-880 ◽  
Author(s):  
Alexey V. Vert ◽  
Stanislav I. Soloviev ◽  
Jody Fronheiser ◽  
Peter M. Sandvik
Keyword(s):  
Single Photon ◽  
Avalanche Photodiodes ◽  
Single Photon Detection ◽  
Induced Current ◽  
Dark Count ◽  
Device Structure ◽  
Photon Detection ◽  
Avalanche Diodes ◽  
Geiger Mode ◽  
Electron Beam Induced Current

4H-SiC single photon avalanche diodes are reported. A separate absorption and multiplication non-reach through device structure was optimized for operation in Geiger mode. An estimated dark current at a gain of 1000 was ranging between 0.4 pA (0.75 nA/cm2) and 20nA (38 A/cm2) on devices with an effective mesa diameter of 260 m. The electron beam induced current technique was used to image defects in the active region of studied devices. Increased reverse bias leakage current and increased Geiger mode dark count probability were correlated with the presence of large number of defects. Single photon detection efficiencies of up to 11% were measured at a wavelength of 266 nm in Geiger mode.

Single photon detection with sine gated dual InGaAs/InP avalanche diodes

2012 ◽  
Author(s):  
Zhiwen Lu ◽  
Wenlu Sun ◽  
Joe Campbell ◽  
Xudong Jiang ◽  
Mark A. Itzler
Keyword(s):  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Avalanche Diodes
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