Metal deposition into a porous silicon layer by immersion plating: Influence of halogen ions

1998 ◽  
Vol 83 (8) ◽  
pp. 4501-4506 ◽  
Author(s):  
Takashi Tsuboi ◽  
Tetsuo Sakka ◽  
Yukio H. Ogata
2003 ◽  
Vol 197 (1) ◽  
pp. 51-56 ◽  
Author(s):  
F. A. Harraz ◽  
T. Sakka ◽  
Y. H. Ogata

1999 ◽  
Vol 147 (1-4) ◽  
pp. 6-13 ◽  
Author(s):  
Takashi Tsuboi ◽  
Tetsuo Sakka ◽  
Yukio H Ogata

2005 ◽  
Vol 125 (10) ◽  
pp. 407-412 ◽  
Author(s):  
Masanori Hayase ◽  
Daisuke Saito ◽  
Takeshi Hatsuzawa

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.


Sign in / Sign up

Export Citation Format

Share Document