Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

2011 ◽  
Vol 99 (26) ◽  
pp. 263501 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Yong-En Syu ◽  
Chia-C. Wang ◽  
...  
Keyword(s):  
Supercritical Co2 ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon ◽  
Supercritical Co2 Fluid

Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment

2012 ◽  
Vol 101 (11) ◽  
pp. 112906 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Yong-En Syu ◽  
Kuo-Hsiao Liao ◽  
...  
Keyword(s):  
Supercritical Co2 ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon ◽  
Supercritical Co2 Fluid

scholarly journals High performance of graphene oxide-doped silicon oxide-based resistance random access memory

2013 ◽  
Vol 8 (1) ◽  
pp. 497 ◽  
Author(s):  
Rui Zhang ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kai-Huang Chen ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon

scholarly journals Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

2013 ◽  
Vol 34 (5) ◽  
pp. 677-679 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

2014 ◽  
Vol 85 ◽  
pp. 183-189 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Jung-Hui Chen ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Syuan-Yong Huang ◽  
...  
Keyword(s):  
Supercritical Co2 ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Mechanism Of Resistance ◽  
Resistance Random Access Memory ◽  
Supercritical Co2 Fluid

Performance and characteristics of double layer porous silicon oxide resistance random access memory

2013 ◽  
Vol 102 (25) ◽  
pp. 253509 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Double Layer ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

scholarly journals Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

2013 ◽  
Vol 34 (3) ◽  
pp. 399-401 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Hsing-Hua Wu ◽  
Jung-Hui Chen ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

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