scholarly journals Molecular dynamics studies of the bonding properties of amorphous silicon nitride coatings on crystalline silicon

2011 ◽  
Vol 110 (12) ◽  
pp. 124905 ◽  
Author(s):  
Keith T. Butler ◽  
Machteld P. W. E. Lamers ◽  
Arthur W. Weeber ◽  
John H. Harding
Keyword(s):  
Molecular Dynamics ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Amorphous Silicon Nitride ◽  
Nitride Coatings ◽  
Bonding Properties

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

Polymer-Derived Si3N4/BN Composites

1989 ◽  
Vol 171 ◽  
Author(s):  
Wayde R. Schmidt ◽  
William J. Hurley ◽  
Vijay Sukumar ◽  
Robert H. Doremus ◽  
Leonard V. Interrante
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Surface Area ◽  
Crystalline Silicon ◽  
Relative Proportion ◽  
Polymeric Precursor ◽  
Preceramic Polymer ◽  
Amorphous Silicon Nitride ◽  
Area Reduction ◽  
Surface Area Reduction

ABSTRACTPartially crystalline silicon nitride, with a specific surface area greater than 200 m2/g, is obtained by the pyrolysis of an organometallic, polymeric precursor under NH3 to 1000 °C. Additional heating to 1400 °C under N2 produces alpha-Si3N4. The addition of up to 15% h-BN was found to affect the coarsening characteristics of amorphous silicon nitride by promoting surface area reduction and suppressing crystallinity. By combining Si3N4 and BN molecular and polymeric precursors prior to ceramic conversion, or incorporating Si, N, and B into a single preceramic polymer, the relative proportion and crystallinity of the ceramic phases can be controlled in the resulting Si3N4/BN composites.

Bias Stress Induced Instabilities in Amorphous Silicon Nitride / Crystalline Silicon and Amorphous Silicon Nitride / Amorphous Silicon Structures

1991 ◽  
Vol 219 ◽  
Author(s):  
J. Kanicki ◽  
C. Godet ◽  
A. V. Gelatos
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Localized States ◽  
Negative Bias ◽  
Amorphous Silicon Nitride ◽  
Bias Stress ◽  
Silicon Structures ◽  
Hydrogenated Amorphous

ABSTRACTThe effects of positive and negative bias stress on hydrogenated amorphous silicon nitride / crystalline silicon and hydrogenated amorphous silicon nitride / hydrogenated amorphous silicon (a-Si:H) structures are investigated as a function of stress time, stress temperature and stress bias. It is shown that in both structures bias stress induces a parallel shift of the C-V (capacitance-voltage) characteristics. For a given stress bias the direction of the C-V shift depends on the sign of the applied stress voltage, while the magnitude of the C-V shift depends on stress time and temperature. In addition, it is shown that positive bias stress slightly increases the number of localized states in the a-Si:H mobility gap, but negative bias stress does not. These results lead us to conclude that the C-V shift is not induced by dangling bond defects in a-Si:H but rather by carrier trapping in the insulator.

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