Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage

2011 ◽  
Vol 110 (11) ◽  
pp. 114520 ◽  
Author(s):  
Chiyui Ahn ◽  
Byoungil Lee ◽  
Rakesh G. D. Jeyasingh ◽  
Mehdi Asheghi ◽  
G. A. M. Hurkx ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Crystallization Properties ◽  
Change Memory

Advantages of Mo4.9(Sb2Te)95.1 film with improved crystallization properties for phase change memory

2015 ◽  
Vol 161 ◽  
pp. 240-243 ◽  
Author(s):  
Hui Wang ◽  
Guoxiang Wang ◽  
Yimin Chen ◽  
Xiang Shen ◽  
Yegang Lv ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Crystallization Properties ◽  
Change Memory

Crystallization Properties of Al-Sb Alloys for Phase Change Memory Applications

2021 ◽  
Author(s):  
Rubab Ume ◽  
Haibo Gong ◽  
Vadim Tokranov ◽  
Michael Yakimov ◽  
Devendra K Sadana ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Crystallization Properties ◽  
Memory Applications ◽  
Change Memory

scholarly journals Crystallization properties of melt-quenched Ge-rich GeSbTe thin films for phase change memory applications

2020 ◽  
Vol 128 (15) ◽  
pp. 155105
Author(s):  
S. M. S. Privitera ◽  
I. López García ◽  
C. Bongiorno ◽  
V. Sousa ◽  
M. C. Cyrille ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Crystallization Properties ◽  
Memory Applications ◽  
Change Memory

scholarly journals 8-bit Precision In-Memory Multiplication with Projected Phase-Change Memory

2018 ◽  
Author(s):  
I. Giannopoulos ◽  
A. Sebastian ◽  
M. Le Gallo ◽  
V.P. Jonnalagadda ◽  
M. Sousa ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Change Memory

Precision of synaptic weights programmed in phase-change memory devices for deep learning inference

2020 ◽  
Author(s):  
S. R. Nandakumar ◽  
Irem Boybat ◽  
Jin-Ping Han ◽  
Stefano Ambrogio ◽  
Praneet Adusumilli ◽  
...  
Keyword(s):  
Deep Learning ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

scholarly journals Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge2Sb2Te5

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22479-22488
Author(s):  
Jeong Hwa Han ◽  
Hun Jeong ◽  
Hanjin Park ◽  
Hoedon Kwon ◽  
Dasol Kim ◽  
...  
Keyword(s):  
Phase Change ◽  
Charge Density ◽  
Chemical Bonding ◽  
Local Structure ◽  
Phase Change Memory ◽  
Change Memory

Charge density differences (CDDs) on Ge–C–Sb bonds in CGST(5%) and Ge–C–Sb in CGST(10%).

Sign in / Sign up

Export Citation Format

Share Document