scholarly journals Direct and indirect excitation of Nd3+ ions sensitized by Si nanocrystals embedded in a SiO2 thin film

2011 ◽  
Vol 110 (11) ◽  
pp. 113518 ◽  
Author(s):  
E. Steveler ◽  
H. Rinnert ◽  
M. Vergnat
Keyword(s):  
Thin Film ◽  
Sio2 Thin Film ◽  
Si Nanocrystals

scholarly journals Modeling of lateral charge transfer in Si nanocrystals in SiO2 thin film

2012 ◽  
Vol 111 (7) ◽  
pp. 073707
Author(s):  
Q. Yu ◽  
Y. Liu ◽  
T. P. Chen ◽  
Y. F. Yu ◽  
J. I. Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Sio2 Thin Film ◽  
Si Nanocrystals

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Optical Properties of Zn and Cu Co-doped TiO2 ∶SiO2 Thin Film Materials

2017 ◽  
Vol 38 (1) ◽  
pp. 27-31 ◽  
Author(s):  
伞靖 SAN Jing ◽  
魏长平 WEI Chang-ping ◽  
孙双 SUN Shuang ◽  
何瑞英 HE Rui-ying ◽  
彭春佳 PENG Chun-jia
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Doped Tio2 ◽  
Sio2 Thin Film ◽  
Co Doped

Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices

2006 ◽  
Vol 50 (6) ◽  
pp. 1097-1104 ◽  
Author(s):  
Darrell Niemann ◽  
Norman Gunther ◽  
Charles Kwong ◽  
Mark Barycza ◽  
Mahmud Rahman
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Sio2 Thin Film ◽  
Capacitance Voltage ◽  
Organic Semiconductor Devices ◽  
Voltage Hysteresis

A Quantum Mechanical Investigation of Positively Charged Defects In SiO2 Thin Film Devices

1996 ◽  
Vol 446 ◽  
Author(s):  
Antonio M. Ferreira ◽  
Shashi P. Kama ◽  
Charles P. Brothers ◽  
Robert D. Pugh ◽  
Babu B. K. Singaraju ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Mechanical ◽  
Hartree Fock ◽  
Sio2 Thin Film ◽  
Mechanical Investigation ◽  
Moller Plesset ◽  
The Stability ◽  
Charged Defects ◽  
Positively Charged ◽  
Thin Film Devices

AbstractAb initio Hartree-Fock and second-order Möller-Plesset theory calculations have been performed to investigate the stability of triply-coordinated 0+ centers in the Si-O-Si network of amorphous SiO2. The calculations reveal that the H+ ion binds with a bridging O center to form a very stable (De > 6 eV) trivalent O complex. Capture of an electron by the positively charged protonated complex, however, is predicted to immediately lead to the dissociation of the O-H bond. A relatively weaker, but stable bond is also formed between the bridging O atom and a +SiH3 ion.

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