Characterization of MFIS Structure with Dy-Doped ZrO[sub 2] Buffer Layer

2011 ◽  
Author(s):  
J. H. Im ◽  
G. Z. Ah ◽  
D. H. Han ◽  
B. E. Park ◽  
Jisoon Ihm ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Mfis Structure

Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Aln Buffer

Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

1996 ◽  
Vol 286 (1-2) ◽  
pp. 107-110 ◽  
Author(s):  
Ching-Ting Lee ◽  
Chi-Yu Wang ◽  
Yeong-Chang Chou
Keyword(s):  
Buffer Layer ◽  
Layer Function ◽  
Gaas Buffer Layer

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Crystallographic Characterization of a GaN Epilayer Grown on a Nanoneedle Buffer Layer

2010 ◽  
Vol 60 (9) ◽  
pp. 1050-1054
Author(s):  
Yun Jeong CHOI ◽  
Min Jeong SHIN ◽  
Hunsoo JEON ◽  
Hyung Soo AHN ◽  
Jiho CHANG ◽  
...  
Keyword(s):  
Buffer Layer

scholarly journals Experimental Characterization of Plasmonic Sensors Based on Lab-Built Tapered Plastic Optical Fibers

2020 ◽  
Vol 10 (12) ◽  
pp. 4389 ◽  
Author(s):  
Nunzio Cennamo ◽  
Francesco Arcadio ◽  
Aldo Minardo ◽  
Domenico Montemurro ◽  
Luigi Zeni
Keyword(s):  
Buffer Layer ◽  
Optical Fibers ◽  
Gold Film ◽  
Signal To Noise Ratio ◽  
Experimental Characterization ◽  
Plasmonic Sensors ◽  
Spr Sensor ◽  
The Core ◽  
Plastic Optical Fibers

In this work, we have compared several configurations of surface plasmon resonance (SPR) sensors based on D-shaped tapered plastic optical fibers (TPOFs). Particularly, the TPOFs used to obtain the SPR sensors are made by a lab-built system based on two motorized linear positioning stages and a heating plate. Preliminarily, a comparative analysis has been carried out between two different configurations, one with and one without a thin buffer layer deposited between the core of TPOFs and the gold film. After this preliminary step, we have used the simpler configuration, obtained without the buffer layer, to realize different SPR D-shaped TPOF sensors. This study could be of interest in SPR D-shaped multimode plastic optical fiber (POF) sensors because, without the tapers, the performances decrease when the POF’s diameter decreases, whereas the performances improve in SPR D-shaped tapered POF sensors, where the diameter decreases in the D-shaped sensing area. The performances of the SPR sensors based on different taper ratios have been analyzed and compared. The SPR-TPOF sensors have been tested using water–glycerin mixtures with refractive indices ranging from 1.332 to 1.381 RIU. According to the theory, the experimental results have demonstrated that, as the taper ratio increases, the sensitivity of the SPR sensor increases as well, while on the contrary the signal-to-noise ratio (SNR) decreases.

Characterization of the buffer layer in SiC heteroepitaxy

1993 ◽  
Vol 68 (4) ◽  
pp. 461-466 ◽  
Author(s):  
N. Bécourt ◽  
B. Cros ◽  
J.L. Ponthenier ◽  
R. Berjoan ◽  
A.M. Papon ◽  
...  
Keyword(s):  
Buffer Layer

Characterization of Dielectric Properties of Alkoxy-Derived (Y,Yb)MnO3 Ferroelectrics/Insulator Stacking Layers

2006 ◽  
Vol 301 ◽  
pp. 65-70 ◽  
Author(s):  
Kazuyuki Suzuki ◽  
Kiyotaka Tanaka ◽  
Tatsuo Kimura ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Property ◽  
Surface Morphology ◽  
Insulator Layer ◽  
Surface Smoothness ◽  
Y2o3 Layer ◽  
Mno3 Film ◽  
Mfis Structure

The (Y,Yb)MnO3 films were crystallized on Y2O3 layers using alkoxy-derived precursor solutions. As a result of investigation of the effect of the Y2O3 layer on the dielectric properties of the (Y,Yb)MnO3/Y2O3/Si, the crystallographic properties such as the orientation and surface morphology of the (Y,Yb)MnO3 thin films depended on the crystallographic appearance of the insulator layer. Following that, the dielectric properties of the MFIS structures varied. For the construction of excellent MFIS structure, the improvement of the orientation, crystallinity, and surface smoothness of the (Y,Yb)MnO3 film by the optimization of the microstructure and dielectric property of the insulator is necessary.

Electrical characterization of defects in Cu(In,Ga)Se2 solar cells containing a ZnSe or a CdS buffer layer

2001 ◽  
Vol 387 (1-2) ◽  
pp. 231-234 ◽  
Author(s):  
M Munzel ◽  
C Deibel ◽  
V Dyakonov ◽  
J Parisi ◽  
W Riedl ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Electrical Characterization
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